High reliability fast switching diode PAKER MMBD4148 featuring low reverse leakage in SOT23 package
Key Attributes
Model Number:
MMBD4148
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
2.5uA
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
100V
Pd - Power Dissipation:
350mW
Voltage - Forward(Vf@If):
715mV@1mA
Current - Rectified:
300mA
Mfr. Part #:
MMBD4148
Package:
SOT-23
Product Description
Product Overview
The MMBD4148 is a fast switching diode in a SOT-23 small outline plastic package. It offers high stability, high reliability, and low reverse leakage, making it suitable for various fast switching applications. This device is halogen-free and RoHS compliant.
Product Attributes
- Brand: (Parker Microelectronics)
- Origin: Shenzhen, China
- Package: SOT-23 Small Outline Plastic Package
- Certifications: Halogen free and RoHS compliant
- Marking: KA2
- Polarity: Color band denotes cathode end
- Mounting Position: Any
Technical Specifications
| Parameter | Test Conditions | Min | Max | Unit |
| Maximum Ratings & Thermal Characteristics | ||||
| Non-Repetitive Peak Reverse Voltage (VRM) | 100 | V | ||
| Peak Repetitive Peak Reverse Voltage (VRRM) | 75 | V | ||
| Peak Working Peak Reverse Voltage (VRWM) | 75 | V | ||
| DC Blocking Voltage (VR) | 75 | V | ||
| RMS Reverse Voltage (VR(RMS)) | 53 | V | ||
| Forward Continuous Current (IFM) | 300 | mA | ||
| Average Rectified Output Current (IO) | 150 | mA | ||
| Non-repetitive Peak Forward Surge Current (@8.3mS) (IFSM) | 2.0 | A | ||
| Power Dissipation (Pd) | 350 | mW | ||
| Thermal Resistance From Junction To Ambient (RJA) | 350 | /W | ||
| Operation Junction Temperature Range (TJ) | -55 | +150 | ||
| Storage Temperature Range (TSTG) | -55 | +150 | ||
| Electrical Characteristics | ||||
| Reverse breakdown voltage (V(BR)) | IR=100A | 75 | V | |
| Reverse current (IR) | VR=75V | 2.5 | A | |
| Reverse current (IR) | VR=20V | 25 | nA | |
| Forward voltage (VF1) | IF=1mA | 0.715 | V | |
| Forward voltage (VF2) | IF=10mA | 0.855 | V | |
| Forward voltage (VF3) | IF=50mA | 1.0 | V | |
| Forward voltage (VF4) | IF=150mA | 1.25 | V | |
| Capacitance between terminals (CT) | VR=0V, f=1MHz | 2 | pF | |
| Reverse recovery time (trr) | IF=IR=10mA,Irr=0.1XIR,RL=100 | 4 | nS | |
| Symbol | MILLIMETER | INCHES | ||
| MIN | MAX | MIN | MAX | |
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| E | 2.250 | 2.550 | 0.089 | 0.100 |
| E1 | 1.200 | 1.400 | 0.047 | 0.055 |
| e | 0.950 BSC | 0.037 BSC | ||
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| 0 | 8 | |||
2412311646_PAKER-MMBD4148_C42432516.pdf
Related Products
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
