Discrete 800 Micron pHEMT Device Operating DC to 20 GHz Qorvo QPD2080D Microwave Power Transistor
Key Attributes
Model Number:
QPD2080D
Product Custom Attributes
Mfr. Part #:
QPD2080D
Product Description
Product Overview
The Qorvo QPD2080D is a discrete 800-micron pHEMT operating from DC to 20 GHz. Fabricated using Qorvos standard 0.25 um power pHEMT production process, it incorporates advanced techniques to optimize microwave power and efficiency at high drain bias conditions. This device typically delivers 29.5 dBm of output power at P1dB with 11.5 dB gain and 56% power-added efficiency at 1 dB compression, making it suitable for high-efficiency applications. The QPD2080D features a protective overcoat layer with silicon nitride for environmental robustness and scratch protection. It is lead-free and RoHS compliant.
Product Attributes
- Brand: Qorvo
- Technology: 0.25 um GaAs pHEMT
- Certifications: RoHS compliant, Lead Free, Halogen Free, Antimony Free, TBBP-A Free, PFOS Free, SVHC Free
- ESD Sensitivity: ESD-Sensitive Device
Technical Specifications
| Parameter | Value | Units | Conditions |
|---|---|---|---|
| Frequency | DC 20 | GHz | |
| Output Power (P1dB) | 29.5 | dBm | @ 12 GHz |
| Typical Gain | 11.5 | dB | @ 12 GHz |
| Typical PAE (1dB) | 56 | % | @ 12 GHz |
| Noise Figure | 1 | dB | @ 12 GHz |
| No Vias | Yes | ||
| Chip Dimensions | 0.41 x 0.54 x 0.10 | mm | |
| Pad Dimensions (Gate) | 71 x 71 | um | |
| Pad Dimensions (Drain) | 121 x 71 | um | |
| Pad Dimensions (Source Outermost) | 121 x 96 | um | |
| Pad Dimensions (Source Center) | 71 x 71 | um | |
| Drain-Source Voltage (VDS) | 8 | V | Absolute Continuous |
| Gate-Source Voltage (VGS) | -3 | V | Absolute Continuous |
| Drain Current (IDS) | IDSS | mA | Absolute Continuous |
| Forward Gate Current (IG,F) | 40 | mA | Absolute Continuous |
| Channel Temperature (TCH) | 150 | C | Absolute Continuous (1.0E+6 hours median life) |
| Storage Temperature (TSTG) | -65 to 150 | C | Absolute Continuous |
| RF Input Power (PIN) | 26 | dBm | At 3dB Compression (Absolute Continuous) |
| Power Dissipation (PTOT) | 2.8 | W | Absolute Continuous |
| Output Power at 1dB Compression (P1dB) | 29.5 | dBm | Freq = 12 GHz, VDS = 8 V, IDS = 50% IDSS |
| Gain at P1dB (G1dB) | 11.5 | dB | Freq = 12 GHz, VDS = 8 V, IDS = 50% IDSS |
| PAE at P1dB (PAE) | 56 | % | Freq = 12 GHz, VDS = 8 V, IDS = 50% IDSS |
| Saturated Drain Current (IDSS) | 259 (typical std dev 6.4) | mA | VDS = 2 V, VGS = 0 V |
| Transconductance (Gm) | 309 | mS | VDS = 2 V, IDS = 50% IDSS |
| Pinch-Off Voltage (VP) | -1.0 | V | VDS = 2 V, IDS = 0.4 mA |
| Gate-Drain Breakdown Voltage (BVGD) | -15 | V | IG = 0.8 mA, source open |
| Gate-Source Breakdown Voltage (BVGS) | -15 | V | IG = 0.8 mA, drain open |
| Thermal Resistance (RTH) | 33 | C/W | AuSn eutectic attach |
Applications
- Defense and Aerospace
- High-Reliability
- Test and Measurement
- Commercial
- Broadband Wireless
Ordering Information
| Part Number | Description |
|---|---|
| QPD2080D | 800 um GaAs pHEMT |
2511201113_Qorvo-QPD2080D_C39040237.pdf
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