Paker AO3415 Small Outline SOT 23 Package P Channel MOSFET for Battery Protection and Load Switching
Key Attributes
Model Number:
AO3415
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
RDS(on):
37mΩ@4.5V;50mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
105pF
Output Capacitance(Coss):
138pF
Input Capacitance(Ciss):
1.015nF
Gate Charge(Qg):
11.3nC@4.5V
Mfr. Part #:
AO3415
Package:
SOT-23
Product Description
Product Overview
The AO3415 is a P-Channel Enhancement Mode Power MOSFET from Parker Microelectronics, designed with an advanced trench process technology. It features a high-density cell design for ultra-low on-resistance and is housed in a small outline SOT-23 plastic package. This MOSFET is ideal for applications such as battery protection, load switching, and power management.
Product Attributes
- Brand: (Parker Microelectronics)
- Package: SOT-23 Small Outline Plastic Package
- Certifications: Halogen free and RoHS compliant
- Material: Epoxy
- UL Rating: 94V-0
- Packing: Tape/Reel, 7" reel, 3000 pcs, EIA-481-1
- Marking: R15
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage (BV(BR)DSS) | VGS=0VID=-250A | -20 | -- | -- | V |
| VDS=-20VVGS=0V | -- | -- | -1 | A | |
| Gate-Body Leakage Current (IGSS) | VGS=10VVDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage (VGS(th)) | VDS=VGSID=-250A | -0.4 | -0.7 | -1.0 | V |
| Drain-Source On-State Resistance (RDS(on)) | VGS=-4.5VID=-3A | -- | 37 | 45 | m |
| VGS=-2.5VID=-3A | -- | 50 | 65 | m | |
| Input Capacitance (CISS) | VDS=-9VVGS=0V f=1MHz | -- | 1015 | -- | pF |
| Output Capacitance (COSS) | VDS=-9VID=-5A VGS=-4.5V | -- | 138 | -- | pF |
| Reverse Transfer Capacitance (CRSS) | VDD=-9VID=-1A VGS=-4.5VRG=2.5 | -- | 105 | -- | pF |
| Total Gate Charge (Qg) | -- | -- | 11.3 | -- | nC |
| Gate Source Charge (Qgs) | -- | -- | 2.3 | -- | nC |
| Gate Drain Charge (Qgd) | -- | -- | 2.4 | -- | nC |
| Turn-on Delay Time (td(on)) | -- | -- | 8.5 | -- | nS |
| Turn-on Rise Time (tr) | -- | -- | 35.5 | -- | nS |
| Turn-Off Delay Time (td(off)) | -- | -- | 78 | -- | nS |
| Turn-Off Fall Time (tf) | -- | -- | 58 | -- | nS |
| Forward on voltage (VSD) | Tj=25Is=-5A | -- | -- | -1.2 | V |
| Maximum Power Dissipation (PD) | Tc=25C | -- | 1.5 | -- | W |
| Drain-Source Continuous Current (ID) | Tc=25C | -- | -5 | -- | A |
| Pulse Drain Current (IDM) | Tc=25C | -- | -30 | -- | A |
| Diode Continuous Forward Current (IS) | Tc=25C | -- | -5 | -- | A |
| Gate-Source Voltage (VGS) | -- | -- | 12 | -- | V |
| Junction Temperature (TJ) | -- | -- | 150 | -- | C |
| Storage Temperature Range (TSTG) | -- | -55 | -- | 150 | C |
| Thermal Resistance Junction-to-Ambient (RJA) | Mounted on Large Heat Sink | -- | 105 | -- | C/W |
2508041620_PAKER-AO3415_C49652781.pdf
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