750V SiC FET Device Featuring Low On Resistance Qorvo UJ4C075044B7S Ideal for Power Conversion Systems
Product Overview
The UJ4C075044B7S is a 750V, 44mW G4 SiC FET, engineered with a unique 'cascode' circuit configuration combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET device. This design offers standard gate-drive characteristics, making it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. It excels in applications requiring fast switching and standard gate drive, such as EV charging, switch mode power supplies, PV inverters, power factor correction modules, motor drives, and induction heating. Key advantages include ultra-low gate charge (QG = 37.8nC), low on-resistance (RDS(on) = 44mW typ.), excellent reverse recovery (Qrr = 55nC), and a high operating temperature of 175C max. The device is also ESD protected (HBM class 2, CDM class C3).
Product Attributes
- Brand: Qorvo (implied by datasheet footer)
- Material: Silicon Carbide (SiC) FET
- Package Type: D2PAK-7L
- ESD Protection: HBM class 2, CDM class C3
Technical Specifications
| Parameter | Test Conditions | Value | Units |
|---|---|---|---|
| Part Number | UJ4C075044B7S | ||
| Drain-source breakdown voltage (BVDS) | VGS=0V, ID=1mA | 750 | V |
| On-resistance (RDS(on)) | VGS=12V, ID=25A, TJ=25C | 44 | mW (typ) |
| On-resistance (RDS(on)) | VGS=12V, ID=25A, TJ=175C | 56 | mW (typ) |
| Gate threshold voltage (VG(th)) | VDS=5V, ID=10mA | 4.8 | V (typ) |
| Total gate charge (QG) | VDS=400V, ID=25A, VGS = 0V to 15V | 37.8 | nC (typ) |
| Reverse recovery charge (Qrr) | VR=400V, IS=25A, VGS=0V, RG_EXT=50W, di/dt=1000A/ms, TJ=25C | 55 | nC (typ) |
| Reverse recovery charge (Qrr) | VR=400V, IS=25A, VGS=0V, RG_EXT=50W, di/dt=1000A/ms, TJ=150C | 60 | nC (typ) |
| Diode forward voltage (VFSD) | VGS=0V, IS=10A, TJ=25C | 1.2 | V (typ) |
| Maximum junction temperature (TJ,max) | 175 | C | |
| Operating and storage temperature (TJ, TSTG) | -55 to 175 | C | |
| Thermal resistance, junction-to-case (RJC) | DC | 0.64 | C/W (typ) |
| Thermal resistance, junction-to-case (RJC) | AC (f > 1Hz) | 0.83 | C/W (typ) |
| Continuous drain current (ID) | TC = 25C | 35.6 | A |
| Pulsed drain current (IDM) | TC = 25C | 110 | A |
| Single pulsed avalanche energy (EAS) | L=15mH, IAS =2.1A | 33 | mJ |
| Power dissipation (Ptot) | TC = 25C | 181 | W |
| Input capacitance (Ciss) | f=100kHz, VGS=0V | 1400 | pF (typ) |
| Output capacitance (Coss) | f=100kHz, VGS=0V | 55 | pF (typ) |
| Reverse transfer capacitance (Crss) | f=100kHz, VGS=0V | 2.5 | pF (typ) |
2411261455_Qorvo-UJ4C075044B7S_C6731607.pdf
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