Power Management Device PAKER BSS123K N Channel MOSFET Featuring Low On Resistance and Small Package
Key Attributes
Model Number:
BSS123K
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
190mA
Operating Temperature -:
-
RDS(on):
6Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF
Number:
-
Pd - Power Dissipation:
300mW
Input Capacitance(Ciss):
31.6pF
Gate Charge(Qg):
740pC
Mfr. Part #:
BSS123K
Package:
SOT-23
Product Description
Product Overview
The BSS123K is an N-Channel Enhancement Mode Power MOSFET in a SOT-23 small outline plastic package. It features a high-density cell design for ultra-low on-resistance, advanced trench process technology, and is halogen-free and RoHS compliant. This MOSFET is suitable for various applications requiring efficient power management.
Product Attributes
- Brand: (Pakermicro)
- Origin: Shenzhen, China
- Package: SOT-23 Small Outline Plastic Package
- Certifications: UL:94V-0, Halogen free, RoHS compliant
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| BV(BR)DSS | Drain-Source Breakdown Voltage | VGS=0VID=250A | 100 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=100VVGS=0V | -- | -- | 1 | uA |
| IGSS | Gate-Body Leakage Current | VGS=20VVDS=0V | -- | -- | ±10 | uA |
| VGS(th) | Gate Threshold Voltage | VDS=VGSID=250A | 1.0 | 2.0 | 3.0 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=4.5VID=0.1A | -- | 3.5 | 5.0 | Ω |
| VGS=10VID=0.1A | -- | 4.0 | 6.0 | Ω | ||
| Capacitance | Input Capacitance (CISS) | VDS=50VVGS=0Vf=1MHz | -- | 31.6 | -- | pF |
| Output Capacitance (COSS) | VDS=50VVGS=0Vf=1MHz | -- | 2.8 | -- | pF | |
| Reverse Transfer Capacitance (CRSS) | VDS=50VVGS=0Vf=1MHz | -- | 2 | -- | pF | |
| Dynamic Electrical Characteristics | Total Gate Charge (Qg) | VDS=50V,ID=0.2A,VGS=10V | -- | 0.74 | -- | nC |
| Gate Source Charge (Qgs) | VDS=50V,ID=0.2A,VGS=10V | -- | 0.08 | -- | nC | |
| Gate Drain Charge (Qgd) | VDS=50V,ID=0.2A,VGS=10V | -- | 0.26 | -- | nC | |
| Switching Characteristics | Turn-on Delay Time (td(on)) | VDD=50V,ID=0.2A, RG=3.3 Ω,VGS=10V | -- | 2 | -- | nS |
| Turn on Rise Time (tr) | VDD=50V,ID=0.2A, RG=3.3 Ω,VGS=10V | -- | 3.1 | -- | nS | |
| Turn-Off Delay Time (td(off)) | VDD=50V,ID=0.2A, RG=3.3 Ω,VGS=10V | -- | 6.5 | -- | nS | |
| Turn Off Fall Time (tf) | VDD=50V,ID=0.2A, RG=3.3 Ω,VGS=10V | -- | 15 | -- | nS | |
| VSD | Source-Drain Diode Characteristics Forward on voltage | Tj=25°CIs=0.1A | -- | -- | 1.2 | V |
| ID | Diode Continuous Forward Current | Tc=25°C | -- | 0.1 | -- | A |
| IDM | Pulse Drain Current | Tc=25°C | -- | 0.76 | -- | A |
| ID | Continuous Drain Current@GS=10V | Tc=25°C | -- | 0.19 | -- | A |
| PD | Maximum Power Dissipation | Tc=25°C | -- | -- | 0.3 | W |
| RθJA | Thermal Resistance Junction-to-Ambient | @ Steady State | -- | 400 | -- | °C/W |
| TJ | Maximum Junction Temperature | -- | -- | -- | 150 | °C |
| TSTG | Storage Temperature Range | -- | -50 | -- | 155 | °C |
| VGS | Gate-Source Voltage | -- | ±20 | -- | -- | V |
2410122024_PAKER-BSS123K_C18221541.pdf
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