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quality SiC FET Qorvo UJ3C065080T3S featuring excellent reverse recovery and compatibility with standard gate drivers factory
quality SiC FET Qorvo UJ3C065080T3S featuring excellent reverse recovery and compatibility with standard gate drivers factory

SiC FET Qorvo UJ3C065080T3S featuring excellent reverse recovery and compatibility with standard gate drivers

Key Attributes
Model Number: UJ3C065080T3S
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
31A
Type:
N-Channel
Pd - Power Dissipation:
190W
Mfr. Part #:
UJ3C065080T3S
Package:
TO-220-3
Product Description

SiC FET 650V - 80m

Product Overview
This SiC FET device is built upon a unique 'cascode' circuit configuration, integrating a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. Its standard gate-drive characteristics enable it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in a TO-220-3L package, this device offers ultra-low gate charge and exceptional reverse recovery characteristics, making it suitable for switching inductive loads and applications requiring standard gate drive. Key benefits include ultra-low gate charge, exceptional reverse recovery, and compatibility with standard gate drivers.

Features

  • Typical on-resistance RDS(on),typ of 80mW
  • Maximum operating temperature of 175C
  • Excellent reverse recovery
  • Low gate charge
  • Low intrinsic capacitance
  • ESD protected, HBM class 2

Typical Applications

  • Induction heating
  • EV charging
  • PV inverters
  • Switch mode power supplies
  • Power factor correction modules
  • Motor drives

Technical Specifications

Parameter Symbol Test Conditions Value Units
Maximum Ratings
Drain-source voltage VDS 650 V
Gate-source voltage VGS -25 to +25 V
Pulsed drain current IDM TC = 25C 65 A
Single pulsed avalanche energy EAS L=15mH, IAS =2.1A 33 mJ
Power dissipation Ptot TC = 25C 190 W
Maximum junction temperature TJ,max 175 C
Operating and storage temperature TJ, TSTG -55 to 175 C
DC Max. lead temperature for soldering, 1/8 from case for 5 seconds TL 250 C
Thermal Characteristics
Thermal resistance, junction-to-case RqJC 0.61 - 0.79 C/W
Electrical Characteristics (TJ = +25C unless otherwise specified)
Drain-source breakdown voltage BVDS VGS=0V, ID=1mA 650 V
Drain-source on-resistance RDS(on) VGS=12V, ID=20A, TJ=25C 80 mW
Drain-source on-resistance RDS(on) VGS=12V, ID=20A, TJ=175C 100 mW
Gate threshold voltage VG(th) VDS=5V, ID=10mA 4 - 6 V
Total gate leakage current IGSS VDS=0V, TJ=25C, VGS=-20V / +20V < 6 mA
Total drain leakage current IDSS VDS=650V, VGS=0V, TJ=25C < 100 mA
Total drain leakage current IDSS VDS=650V, VGS=0V, TJ=175C < 141 mA
Diode Characteristics
Diode continuous forward current IS TC=25C 31 A
Diode pulse current IS,pulse TC=25C 65 A
Forward voltage VFSD VGS=0V, IF=10A, TJ=25C 1.5 - 1.75 V
Reverse recovery charge Qrr VR=400V, IF=20A, VGS=0V, RG_EXT=20W; di/dt=1600A/ms, TJ=150C 111 nC
Reverse recovery time trr VGS=12V, ID=20A, TJ=125C 16 ns
Dynamic Characteristics
Input capacitance Ciss VDS=100V, VGS=0V, f=100kHz 1500 pF
Output capacitance Coss VDS=100V, VGS=0V, f=100kHz 104 pF
Reverse transfer capacitance Crss VDS=100V, VGS=0V, f=100kHz 2.6 pF
Total gate charge QG VDS=400V, ID=20A, VGS = -5V to 15V 51 nC
Turn-on delay time td(on) VDS=400V, ID=20A, Gate Driver =-5V to +15V, RG,EXT=1W, TJ=150C 18 ns
Turn-off delay time td(off) VDS=400V, ID=20A, Gate Driver =-5V to +15V, RG,EXT=20W, TJ=150C 59 ns
Turn-on energy EON Inductive Load, FWD: UJ3D06510TS, TJ=150C 85 mJ
Turn-off energy EOFF Inductive Load, FWD: UJ3D06510TS, TJ=150C 62 mJ
Total switching energy ETOTAL Inductive Load, FWD: UJ3D06510TS, TJ=150C 147 mJ

Package
TO-220-3L

Part Number
UJ3C065080T3S

Marking
UJ3C065080T3S

Datasheet Revision
Rev. D, December 2019


2410121816_Qorvo-UJ3C065080T3S_C6006452.pdf
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