Parker SI2301 P Channel Enhancement Mode Power MOSFET with Ultra Low On Resistance in SOT 23 Package
Key Attributes
Model Number:
SI2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
110mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
87pF@6V
Number:
-
Pd - Power Dissipation:
1.25W
Input Capacitance(Ciss):
415pF@6V
Gate Charge(Qg):
10nC
Mfr. Part #:
SI2301
Package:
SOT-23
Product Description
Product Overview
The SI2301 is a P-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low on-resistance. It features an advanced trench process technology and is housed in a standard SOT-23 small outline plastic package. This MOSFET is Halogen-free and RoHS compliant, making it suitable for various electronic applications.
Product Attributes
- Brand: Parker Microelectronics ()
- Origin: Shenzhen, China
- Certifications: UL: 94V-0, Halogen free, RoHS compliant
- Package: SOT-23 Small Outline Plastic Package
- Packing: Tape/Reel, 7" reel, 3000 pcs per reel (EIA-481-1)
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | ±10 | V | |||
| Continuous Drain Current | ID | TA = 25°C | -3 | A | ||
| Pulsed Drain Current | IDM | 1) | -10 | A | ||
| Maximum Power Dissipation | PD | TA = 25°C | 1.25 | W | ||
| Maximum Power Dissipation | PD | TA = 75°C | 0.8 | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance (PCB mounted) | RthJA | 3) | 166 | °C/W | ||
| Junction-to-Ambient Thermal Resistance (PCB mounted) | RthJA | 2) | 100 | °C/W | ||
| Electrical Characteristics | ||||||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = -250µA | -20 | V | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -4.5V, ID = -3.0A | 64 | mΩ | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -2.5V, ID = -2.0A | 89 | 110 | mΩ | |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250µA | -1 | -1.2 | -1.6 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = -20V, V GS = 0V | -1 | µA | ||
| Gate Body Leakage | IGSS | VGS = ±10V, VDS = 0V | ±100 | nA | ||
| Forward Transconductance | gfs | VDS = -5V, ID = -2.8A | 6.5 | S | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = -250µA | -20 | V | ||
| Electrical Characteristics (Dynamic) | ||||||
| Total Gate Charge | Qg | VDS = -6V, ID = -2.3A, VGS = -4.5V | 5.8 | 10 | nC | |
| Gate-Source Charge | Qgs | VDS = -6V, ID = -2.3A, VGS = -4.5V | 0.85 | nC | ||
| Gate-Drain Charge | Qg | VDS = -6V, ID = -2.3A, VGS = -4.5V | 1.7 | nC | ||
| Turn-On Delay Time | td(on) | VDD = -6V, RL=6Ω, ID -1.A, VGEN = -4.5V, RG = 6Ω | 13 | 25 | ns | |
| Turn-On Rise Time | tr | VDD = -6V, RL=6Ω, ID -1.A, VGEN = -4.5V, RG = 6Ω | 36 | 60 | ns | |
| Turn-Off Delay Time | td(off) | VDD = -6V, RL=6Ω, ID -1.A, VGEN = -4.5V, RG = 6Ω | 42 | 70 | ns | |
| Turn-Off Fall Time | tf | VDD = -6V, RL=6Ω, ID -1.A, VGEN = -4.5V, RG = 6Ω | 34 | 60 | ns | |
| Input Capacitance | Ciss | VDS = -6V, VGS = 0V, f = 1.0 MHz | 415 | pF | ||
| Output Capacitance | Coss | VDS = -6V, VGS = 0V, f = 1.0 MHz | 223 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = -6V, VGS = 0V, f = 1.0 MHz | 87 | pF | ||
| Source-Drain Diode | ||||||
| Max. Diode Forward Current | IS | -1.6 | A | |||
| Diode Forward Voltage | VSD | IS = -1.0A, VGS = 0V | -0.8 | V | ||
2410121753_PAKER-SI2301_C5278884.pdf
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