N Channel Power MOSFET ORIENTAL SEMI OSG60R580FTF Featuring Low Gate Charge and Robust Avalanche Capability

Name: N Channel Power MOSFET ORIENTAL SEMI OSG60R580FTF Featuring Low Gate Charge and Robust Avalanche Capability
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: OSG60R580FTF
Availability: InStock

Key Attributes

Model Number: OSG60R580FTF

Product Custom Attributes

Drain To Source Voltage:

600V

Current - Continuous Drain(Id):

Operating Temperature -:

-55℃~+150℃

RDS(on):

580mΩ@10V

Gate Threshold Voltage (Vgs(th)):

3.9V@250uA

Reverse Transfer Capacitance (Crss@Vds):

3.1pF

Number:

Output Capacitance(Coss):

41.7pF

Input Capacitance(Ciss):

410.8pF

Pd - Power Dissipation:

26W

Gate Charge(Qg):

8.7nC@10V

Mfr. Part #:

OSG60R580FTF

Package:

TO-220F-3

Product Description

Product Overview

The OSG60R580FTF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Generic series. This high-voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge, engineered to minimize conduction and switching losses. It offers superior switching performance and robust avalanche capability, making it ideal for high power density applications requiring the highest efficiency standards. Key applications include PC power, LED lighting, telecom power, server power, EV chargers, and solar/UPS systems.

Product Attributes

Brand: Oriental Semiconductor
Product Line: GreenMOS
Technology: Charge Balance Technology
Channel Type: N-Channel
Mode: Enhancement Mode
Package Type: TO220F
Certifications: Pb Free, RoHS, Halogen Free

Technical Specifications

Parameter	Symbol	Value	Unit	Test Condition
Drain-source voltage (min @ Tj(max))	VDS, min @ Tj(max)	650	V
Pulse drain current	ID, pulse	24	A
RDS(ON) (max @ VGS=10V)	RDS(ON) , max @ VGS=10V	580	m
Total gate charge	Qg	8.7	nC
Drain-source voltage	VDS	600	V	Tj=25C unless otherwise noted
Gate-source voltage	VGS	30	V	Tj=25C unless otherwise noted
Continuous drain current (TC=25 C)	ID	8	A	TC=25 C
Continuous drain current (TC=100 C)	ID	5	A	TC=100 C
Continuous diode forward current (TC=25 C)	IS	8	A	TC=25 C
Power dissipation (TC=25 C)	PD	26	W	TC=25 C
Single pulsed avalanche energy	EAS	125	mJ	Tj=25 C
MOSFET dv/dt ruggedness	dv/dt	50	V/ns	VDS=0480 V
Reverse diode dv/dt	dv/dt	15	V/ns	VDS=0480 V, ISDID
Operation and storage temperature	Tstg, Tj	-55 to 150	C
Thermal resistance, junction-case	RJC	4.81	C/W
Thermal resistance, junction-ambient	RJA	62.5	C/W	Measured on 1 in 2 FR-4 board with 2oz. Copper, still air environment, Ta=25 C
Drain-source breakdown voltage	BVDSS	600	V	VGS=0 V, ID=250 A
Gate threshold voltage	VGS(th)	2.9 - 3.9	V	VDS=VGS, ID=250 A
Drain-source on- state resistance	RDS(ON)	0.5 - 0.58		VGS=10 V, ID=4 A
Gate-source leakage current	IGSS	100	nA	VGS=30 V
Drain-source leakage current	IDSS	10	A	VDS=600 V, VGS=0 V
Input capacitance	Ciss	410.8	pF	VGS=0 V, VDS=50 V, =100 kHz
Output capacitance	Coss	41.7	pF	VGS=0 V, VDS=50 V, =100 kHz
Reverse transfer capacitance	Crss	3.1	pF	VGS=0 V, VDS=50 V, =100 kHz
Turn-on delay time	td(on)	26.4	ns	VGS=10 V, VDS=400 V, RG=3 , ID=4 A
Rise time	tr	17.9	ns	VGS=10 V, VDS=400 V, RG=3 , ID=4 A
Turn-off delay time	td(off)	56.2	ns	VGS=10 V, VDS=400 V, RG=3 , ID=4 A
Fall time	tf	14	ns	VGS=10 V, VDS=400 V, RG=3 , ID=4 A
Total gate charge	Qg	8.7	nC	VGS=10 V, VDS=400 V, ID=4 A
Gate-source charge	Qgs	2.2	nC	VGS=10 V, VDS=400 V, ID=4 A
Gate-drain charge	Qgd	3.8	nC	VGS=10 V, VDS=400 V, ID=4 A
Gate plateau voltage	Vplateau	5.7	V	VGS=10 V, VDS=400 V, ID=4 A
Diode forward voltage	VSD	1.3	V	IS=15 A, VGS=0 V
Reverse recovery time	trr	214.3	ns	VR=400V, IS=4 A, di/dt=100 A/s
Reverse recovery charge	Qrr	1.7	C	VR=400V, IS=4 A, di/dt=100 A/s
Peak reverse recovery current	Irrm	16.1	A	VR=400V, IS=4 A, di/dt=100 A/s
Product Name		OSG60R580FTF		TO220F

TO220F Package Outline Dimensions (Version 1):

Symbol	mm (Min)	mm (Nom)	mm (Max)
E	9.96	10.16	10.36
A	4.50	4.70	4.90
A1	2.34	2.54	2.74
A4	2.56	2.76	2.96
c	0.40	0.50	0.65
D	15.57	15.87	16.17
H1	6.70REF
e		2.54BSC
L	12.68	12.98	13.28
L1	2.88	3.03	3.18
P	3.03	3.18	3.38
P3	3.15	3.45	3.65
F3	3.15	3.30	3.45
G3	1.25	1.35	1.55
b1	1.18	1.28	1.43
b2	0.70	0.80	0.95

TO220F-J Package Outline Dimensions (Version 2):

Symbol	mm (Min)	mm (Nom)	mm (Max)
A	4.50	4.70	4.83
A1	2.34	2.54	2.74
A2	0.70 REF
A3	2.56	2.76	2.93
b	0.70	-	0.90
b1	1.18	-	1.38
b2	-	-	1.47
c	0.45	0.50	0.60
D	15.67	15.87	16.07
D1	15.55	15.75	15.95
D2	9.60	9.80	10.00
E	9.96	10.16	10.36
e		2.54 BSC
H1	6.48	6.68	6.88
L	12.68	12.98	13.28
L1	-	-	3.50
L2	6.50 REF
P	3.08	3.18	3.28
Q	3.20	-	3.40
	1	3	5

Ordering Information:

Package Type	Units/Tube	Tubes / Inner Box	Units/ Inner Box	Inner Box/Carton Box	Units/Carton Box
TO220F-C	50	20	1000	6	6000
TO220F-J	50	20	1000	5	5000

Product Information:

Product	Package	Pb Free	RoHS	Halogen Free
OSG60R580FTF	TO220F	yes	yes	yes

2410121617_ORIENTAL-SEMI-OSG60R580FTF_C2762903.pdf

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