Silicon NPN Transistor PANJIT BCX56-16-AU R1 000A1 Low Vce Saturation Voltage Green Molding Compound
Key Attributes
Model Number:
BCX56-16-AU_R1_000A1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1.4W
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BCX56-16-AU_R1_000A1
Package:
SOT-89
Product Description
NPN Low Vce(sat) Transistor - BCX56-16-AU
The BCX56-16-AU is a silicon NPN epitaxial transistor designed for applications requiring low collector-emitter saturation voltage (Vce(sat)). It offers high collector current capability, excellent DC current gain, and is AEC-Q101 qualified, making it suitable for demanding automotive and industrial applications. This device is lead-free and compliant with EU RoHS 2.0, utilizing a green molding compound.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant, IEC61249 Standard (Green molding compound)
- Complementary Device: PNP complement: BCX53-16-AU
- Material: Silicon NPN epitaxial type
- Color: Green (molding compound)
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Maximum Ratings and Thermal Characteristics | ||||||
| Collector-Base Voltage | VCBO | 120 | V | |||
| Collector-Emitter Voltage | VCEO | 100 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current (DC) | IC | 1 | A | |||
| Collector Current (Pulse) | ICP | 3 | A | |||
| Power Dissipation | PD | 1.4 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | ~ | 150 | °C | |
| Thermal Resistance from Junction to Ambient | RΘJA | (Note) | 89 | °C/W | ||
| Electrical Characteristics | ||||||
| Collector-Emitter Breakdown Voltage | BVCEO | IC= 10mA, IB= 0A | 100 | - | - | V |
| Collector-Base Breakdown Voltage | BVCBO | IC= 0.1mA, IE= 0A | 120 | - | - | V |
| Emitter-Base Breakdown Voltage | BVEBO | IE= 0.1mA, IC= 0A | 6 | - | - | V |
| Collector Cutoff Current | ICBO | VCB= 80V, IE= 0A | - | - | 100 | nA |
| Emitter Cutoff Current | IEBO | VEB= 6V, IC= 0A | - | - | 100 | nA |
| DC Current Gain | hFE | VCE= 2V, IC= 5mA | 100 | - | - | |
| DC Current Gain | hFE | VCE= 2V, IC= 150mA | 100 | - | 250 | |
| DC Current Gain | hFE | VCE= 2V, IC= 500mA | 40 | - | - | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC= 0.1A, IB= 10mA | - | 60 | 120 | mV |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC= 0.5A, IB= 50mA | - | 150 | 350 | mV |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC= 1A, IB= 0.1A | - | 250 | 500 | mV |
| Base-Emitter Saturation voltage | VBE(SAT) | IC= 0.1A, IB= 10mA | - | - | 1.0 | V |
| Base-Emitter Saturation voltage | VBE(SAT) | IC= 0.5A, IB= 50mA | - | - | 1.1 | V |
| Transition Frequency | fT | VCE= 5V, IE= -50mA | 100 | - | - | MHz |
| Collector Output Capacitance | COB | VCB= 10V, IE= 0A, f=1MHz | - | - | 10 | pF |
2410121327_PANJIT-BCX56-16-AU-R1-000A1_C5354950.pdf
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