PANASONIC EMH2412 TL H N Channel Power MOSFET Ideal for LiB Charging Discharging and 24V 6A Circuits
Key Attributes
Model Number:
EMH2412-TL-H
Product Custom Attributes
Configuration:
Common Drain
Drain To Source Voltage:
24V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-
RDS(on):
42mΩ@2.5V,1.5A
Gate Threshold Voltage (Vgs(th)):
1.3V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
2 N-Channel
Input Capacitance(Ciss):
-
Output Capacitance(Coss):
-
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
6.3nC@4.5V
Mfr. Part #:
EMH2412-TL-H
Package:
SOT-383F
Product Description
Product Overview
The EMH2412 is an N-Channel Power MOSFET designed for 24V, 6A applications. It features low ON-resistance and is ideally suited for LiB charging and discharging switches. This common-drain type MOSFET supports 2.5V drive and includes a protection diode.
Product Attributes
- Brand: onsemi
- Certifications: Halogen free compliance
Technical Specifications
| Parameter | Symbol | Conditions | Ratings | Unit |
| Absolute Maximum Ratings | ||||
| Drain-to-Source Voltage | VDSS | 24 | V | |
| Gate-to-Source Voltage | VGSS | ±12 | V | |
| Drain Current (DC) | ID | 6 | A | |
| Drain Current (Pulse) | IDP | PW≤10μs, duty cycle≤1% | 60 | A |
| Allowable Power Dissipation | PD | When mounted on ceramic substrate (900mm2×0.8mm), 1unit | 1.3 | W |
| Total Dissipation | PT | When mounted on ceramic substrate (900mm2×0.8mm), 1unit | 1.4 | W |
| Channel Temperature | Tch | 150 | °C | |
| Storage Temperature | Tstg | -55 to +150 | °C | |
| Electrical Characteristics | ||||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | ID=1mA, VGS=0V | 24 | V |
| Zero-Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | --1 | μA |
| Gate-to-Source Leakage Current | IGSS | VGS=±8V, VDS=0V | ±10 | μA |
| Cutoff Voltage | VGS(off) | VDS=10V, ID=1mA | 0.5 - 1.3 | V |
| Forward Transfer Admittance | | yfs | | VDS=10V, ID=3A | 2.8 - 4.8 | S |
| Static Drain-to-Source On-State Resistance | RDS(on)1 | ID=3A, VGS=4.5V | 16 - 21 - 27 | mΩ |
| Static Drain-to-Source On-State Resistance | RDS(on)2 | ID=3A, VGS=4V | 17 - 22 - 29 | mΩ |
| Static Drain-to-Source On-State Resistance | RDS(on)3 | ID=3A, VGS=3.1V | 18 - 25 - 34 | mΩ |
| Static Drain-to-Source On-State Resistance | RDS(on)4 | ID=1.5A, VGS=2.5V | 21 - 30 - 42 | mΩ |
| Turn-ON Delay Time | td(on) | See specified Test Circuit. | 310 | ns |
| Rise Time | tr | 1020 | ns | |
| Turn-OFF Delay Time | td(off) | 3000 | ns | |
| Fall Time | tf | 2250 | ns | |
| Total Gate Charge | Qg | VDS=10V, VGS=4.5V, ID=6A | 6.3 | nC |
| Gate-to-Source Charge | Qgs | 0.83 | nC | |
| Gate-to-Drain “Miller” Charge | Qg d | 1.9 | nC | |
| Diode Forward Voltage | VSD | IS=6A, VGS=0V | 0.8 - 1.2 | V |
2411200008_PANASONIC-EMH2412-TL-H_C17685862.pdf
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