R O B5817W diode with low forward voltage drop and solderable terminals per MIL STD 750 method 2026
Key Attributes
Model Number:
B5817W
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
20V
Diode Configuration:
Independent
Reverse Leakage Current (Ir):
1mA@20V
Voltage - Forward(Vf@If):
450mV@1.0A
Current - Rectified:
1A
Mfr. Part #:
B5817W
Package:
SOD-123
Product Description
Product Overview
These surface mount Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. They feature a low-profile package, ideal for automated placement, and offer low forward and reverse recovery times.
Product Attributes
- Brand: (Hongjiacheng)
- Origin: Zhuhai Hongjiacheng Technology co., Ltd
- Certifications: RoHS-compliant, halogen-free, UL 94V-0 flammability rating
- Case: SOD-123
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Polarity: Cathode line denotes the cathode end
- Marking: B5817W:SJ, B5818W:SK, B5819W:SL
Technical Specifications
| Parameter | Symbol | Unit | B5817W | B5818W | B5819W | Test Conditions |
| Maximum Repetitive Peak Reverse Voltage | VRRM | V | 20 | 30 | 40 | |
| Maximum RMS Voltage | VRMS | V | 14 | 21 | 28 | |
| Maximum DC Blocking Voltage | VDC | V | 20 | 30 | 40 | |
| Maximum Average Forward Rectified Current | IF(AV) | A | 1.0 | |||
| Non-repetitive Peak Forward Surge Current @t=8.3ms Half-sine wave | IFSM | A | 9.0 | |||
| Power Dissipation | Pd | mW | 500 | (Ta=25) | ||
| Storage Temperature | Tstg | -55~+150 | ||||
| Junction Temperature | Tj | -55 ~+150 | ||||
| Typical Thermal Resistance | RJ-A | /W | 250 | |||
| Maximum instantaneous forward voltage | VF1 | V | 0.45 | 0.55 | 0.6 | IF=1.0A, (Ta=25) |
| Maximum instantaneous forward voltage | VF2 | V | 0.75 | 0.875 | 0.9 | IF=3.0A, (Ta=25) |
| Maximum DC reverse current at rated DC blocking voltage | IR1 | mA | 1.0 | VR=VDC, TA=25 | ||
| Maximum DC reverse current at rated DC blocking voltage | IR2 | mA | 10 | VR=VDC, TA=100 | ||
| Typical junction capacitance | CJ | pF | 120 | VR=4.0V, f=1MHz, (Ta=25) | ||
2506261420_R-O-B5817W_C7420328.pdf
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