Charge balance technology MOSFET ORIENTAL SEMI OSG60R180FF with low gate charge and robust switching
Key Attributes
Model Number:
OSG60R180FF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
180mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
3.94pF@50V
Number:
-
Input Capacitance(Ciss):
1.44nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
23.3nC@10V
Mfr. Part #:
OSG60R180FF
Package:
TO-220F
Product Description
Product Overview
The OSG60R180FF is a high-voltage N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Generic series, engineered with charge balance technology for exceptional low on-resistance and reduced gate charge. This enhancement-mode MOSFET is optimized for extreme switching performance, minimizing conduction and switching losses, making it ideal for high power density applications demanding the highest efficiency standards. Its robust design offers superior switching performance and avalanche capability.
Product Attributes
- Brand: Oriental Semiconductor
- Series: GreenMOS
- Technology: Charge Balance Technology
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Package Type: TO220F-P
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source voltage (min @ Tj(max)) | VDS, min @ Tj(max) | 650 | V | |
| Pulse drain current | ID, pulse | 60 | A | |
| Drain-source on-state resistance (max @ VGS=10V) | RDS(ON), max @ VGS=10V | 180 | m | |
| Total gate charge | Qg | 23.3 | nC | |
| Drain-source voltage | VDS | 600 | V | at Tj=25C |
| Gate-source voltage | VGS | 30 | V | at Tj=25C |
| Continuous drain current (TC=25 C) | ID | 20 | A | |
| Continuous drain current (TC=100 C) | ID | 12.5 | A | |
| Pulsed drain current (TC=25 C) | ID, pulse | 60 | A | |
| Continuous diode forward current (TC=25 C) | IS | 20 | A | |
| Diode pulsed current (TC=25 C) | IS, pulse | 60 | A | |
| Power dissipation (TC=25 C) | PD | 34 | W | |
| Single pulsed avalanche energy (EAS) | EAS | 600 | mJ | |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0480 V |
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0480 V, ISDID |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | C | |
| Thermal resistance, junction-case | RJC | 3.67 | C/W | |
| Thermal resistance, junction-ambient | RJA | 62.5 | C/W | Mounted on 1 in 2 FR-4 board with 2oz. Copper, still air, Ta=25 C |
| Drain-source breakdown voltage | BVDSS | 600 | V | VGS=0 V, ID=250 uA |
| Gate threshold voltage | VGS(th) | 2 - 4 | V | VDS=VGS, ID=250 uA |
| Drain-source on-state resistance | RDS(ON) | 0.15 - 0.18 | VGS=10 V, ID=10 A | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V |
| Drain-source leakage current | IDSS | 1 | A | VDS=600 V, VGS=0 V |
| Input capacitance | Ciss | 1440 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Output capacitance | Coss | 105 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Reverse transfer capacitance | Crss | 3.94 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Turn-on delay time | td(on) | 40.3 | ns | VGS=10 V, VDS=480 V, RG=25 , ID=20 A |
| Rise time | tr | 49.3 | ns | VGS=10 V, VDS=480 V, RG=25 , ID=20 A |
| Turn-off delay time | td(off) | 60 | ns | VGS=10 V, VDS=480 V, RG=25 , ID=20 A |
| Fall time | tf | 59.2 | ns | VGS=10 V, VDS=480 V, RG=25 , ID=20 A |
| Total gate charge | Qg | 23.3 | nC | VGS=10 V, VDS=480 V, ID=20 A |
| Gate-source charge | Qgs | 6.6 | nC | VGS=10 V, VDS=480 V, ID=20 A |
| Gate-drain charge | Qgd | 8.3 | nC | VGS=10 V, VDS=480 V, ID=20 A |
| Gate plateau voltage | Vplateau | 5.6 | V | VGS=10 V, VDS=480 V, ID=20 A |
| Diode forward voltage | VSD | 1.4 | V | IS=20 A, VGS=0 V |
| Reverse recovery time | trr | 367.2 | ns | VR=400 V, IS=20 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 4.2 | C | VR=400 V, IS=20 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 24.3 | A | VR=400 V, IS=20 A, di/dt=100 A/s |
| Product Name | OSG60R180FF | TO220F | ||
| Package Marking | OSG60R180F | |||
| E | 9.96 - 10.36 | mm | TO220F-P outline dimension | |
| A | 4.50 - 4.90 | mm | TO220F-P outline dimension | |
| A1 | 2.34 - 2.74 | mm | TO220F-P outline dimension | |
| A4 | 2.56 - 2.96 | mm | TO220F-P outline dimension | |
| c | 0.40 - 0.65 | mm | TO220F-P outline dimension | |
| D | 15.57 - 16.17 | mm | TO220F-P outline dimension | |
| H1 | 6.70 | REF | TO220F-P outline dimension | |
| e | 2.54 | BSC | TO220F-P outline dimension | |
| L | 12.68 - 13.28 | mm | TO220F-P outline dimension | |
| L1 | 2.88 - 3.18 | mm | TO220F-P outline dimension | |
| P | 3.03 - 3.38 | mm | TO220F-P outline dimension | |
| P3 | 3.15 - 3.65 | mm | TO220F-P outline dimension | |
| F3 | 3.15 - 3.45 | mm | TO220F-P outline dimension | |
| G3 | 1.25 - 1.55 | mm | TO220F-P outline dimension | |
| b1 | 1.18 - 1.43 | mm | TO220F-P outline dimension | |
| b2 | 0.70 - 0.95 | mm | TO220F-P outline dimension | |
| Units/Tube | 50 | Ordering Information | ||
| Tubes / Inner Box | 20 | Ordering Information | ||
| Units/Inner Box | 1000 | Ordering Information | ||
| Inner Boxes/Carton Box | 6 | Ordering Information | ||
| Units/Carton Box | 6000 | Ordering Information |
Applications
- PC power
- LED lighting
- Telecom power
- Server power
- EV Charger
- Solar/UPS
2410121617_ORIENTAL-SEMI-OSG60R180FF_C2762901.pdf
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