NPN Silicon Transistor PANJIT BC846A R1 00001 General Purpose Amplifier SOT23 Package RoHS Compliant
Key Attributes
Model Number:
BC846A_R1_00001
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
330mW
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC846A_R1_00001
Package:
SOT-23
Product Description
NPN General Purpose Transistors
The BC846, BC847, BC848, BC849, and BC850 series are NPN epitaxial silicon planar design transistors suitable for general purpose amplifier applications. These devices are lead-free and compliant with EU RoHS 2011/65/EU directive, utilizing a green molding compound as per IEC61249 Std. (Halogen Free). They are available in a SOT-23 plastic package with solderable terminals per MIL-STD-750, Method 2026.
Product Attributes
- Brand: Panjit International Inc.
- Material: Silicon
- Color: Green (molding compound)
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
Technical Specifications
| Series | Voltage (VCEO) | Power Dissipation (mW) | Collector Current (IC) | Collector Current (ICM) | Thermal Resistance (RJA) | Operating/Storage Temp (C) |
|---|---|---|---|---|---|---|
| BC846 | 65 | 330 | 100mA | 200mA | 375 C/W | -55 to 150 |
| BC847, BC850 | 45 | 330 | 100mA | 200mA | 375 C/W | -55 to 150 |
| BC848, BC849 | 30 | 330 | 100mA | 200mA | 375 C/W | -55 to 150 |
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=10mA, IB=0 | 65 (BC846A/B) 45 (BC847A/B/C, BC850B/C) 30 (BC848A/B/C, BC849B/C) | - | - | V |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=10uA, IE=0 | 80 (BC846A/B) 50 (BC847A/B/C, BC850B/C) 30 (BC848A/B/C, BC849B/C) | - | - | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=10uA, IC=0 | 6 (BC846A/B) 6 (BC847A/B/C, BC850B/C) 5 (BC848A/B/C, BC849B/C) | - | - | V |
| Emitter-Base Cutoff Current | IEBO | VEB=5V | - | - | 100 | nA |
| Collector-Base Cutoff Current | ICBO | VCB=30V, IE=0 | - | - | 15 | nA |
| Collector-Base Cutoff Current (TJ=150C) | ICBO | VCB=30V, IE=0, TJ=150C | - | - | 5 | A |
| DC Current Gain (Suffix A) | hFE | IC=10uA, VCE=5V | - | 90 | 270 | - |
| DC Current Gain (Suffix B) | hFE | IC=10uA, VCE=5V | - | 150 | 420 | - |
| DC Current Gain (Suffix C) | hFE | IC=10uA, VCE=5V | - | 270 | 800 | - |
| DC Current Gain | hFE | IC=2mA, VCE=5V | 110 (BC846~BC848 A) 180 (BC846~BC850 B) 220 (BC847~BC850 C) | 200 (BC846~BC848 A) 290 (BC846~BC850 B) 450 (BC847~BC850 C) | 420 (BC846~BC848 A) 520 (BC846~BC850 B) 800 (BC847~BC850 C) | - |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC=10mA, IB=0.5mA | - | - | 0.25 | V |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC=100mA, IB=5mA | - | - | 0.6 | V |
| Base-Emitter Saturation Voltage | VBE(SAT) | IC=10mA, IB=0.5mA | - | 0.7 | - | V |
| Base-Emitter Saturation Voltage | VBE(SAT) | IC=100mA, IB=5mA | - | 0.9 | - | V |
| Base-Emitter Voltage | VBE(ON) | IC=2mA, VCE=5V | 0.58 | 0.66 | - | V |
| Base-Emitter Voltage | VBE(ON) | IC=10mA, VCE=5V | 0.70 | 0.77 | - | V |
| Collector-Base Capacitance | C CBO | VCB=10V, IE=0, f=1MHz | - | - | 4.5 | pF |
2410121616_PANJIT-BC846A-R1-00001_C263141.pdf
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