N Channel Power MOSFET ORIENTAL SEMI OSG55R160FZF with reduced gate charge and robust avalanche capability
Key Attributes
Model Number:
OSG55R160FZF
Product Custom Attributes
Drain To Source Voltage:
550V
Current - Continuous Drain(Id):
23A
Operating Temperature -:
-55℃~+150℃
RDS(on):
160mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
2.9pF
Number:
-
Output Capacitance(Coss):
145.8pF
Input Capacitance(Ciss):
1.511nF
Pd - Power Dissipation:
34W
Gate Charge(Qg):
21.3nC@10V
Mfr. Part #:
OSG55R160FZF
Package:
TO-220F-3
Product Description
Product Overview
The Oriental Semiconductor OSG55R160FZF is an N-Channel Power MOSFET from the GreenMOS Z series, engineered with charge balance technology for exceptional low on-resistance and reduced gate charge. This MOSFET is designed to minimize conduction losses, deliver superior switching performance, and offer robust avalanche capability. Integrated with a fast recovery diode (FRD), it minimizes reverse recovery time, making it ideal for resonant switching topologies. Applications include PC power supplies, telecom power, server power, EV chargers, and motor drivers, aiming for higher efficiency, increased reliability, and smaller form factors.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: GreenMOS Z series
- Technology: Charge Balance Technology
- Diode Integration: Fast Recovery Diode (FRD)
- RoHS Compliant: Yes
- Halogen Free: Yes
- Pb Free: Yes
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source voltage (min @ Tj(max)) | VDS, min @ Tj(max) | 600 | V | |
| Pulsed drain current | ID, pulse | 69 | A | |
| Drain-source on-state resistance (max @ VGS=10V) | RDS(ON), max @ VGS=10V | 160 | m | |
| Total gate charge | Qg | 21.3 | nC | VGS=10 V, VDS=400 V, ID=10 A |
| Product Name | OSG55R160FZF | |||
| Package Marking | OSG55R160FZ | |||
| Drain-source voltage | VDS | 550 | V | Tj=25 C |
| Gate-source voltage | VGS | 30 | V | Tj=25 C |
| Continuous drain current (TC=25 C) | ID | 23 | A | Tj=25 C |
| Continuous drain current (TC=100 C) | ID | 14.5 | A | Tj=100 C |
| Pulsed drain current (TC=25 C) | ID, pulse | 69 | A | TC=25 C |
| Continuous diode forward current (TC=25 C) | IS | 23 | A | TC=25 C |
| Diode pulsed current (TC=25 C) | IS, pulse | 69 | A | TC=25 C |
| Power dissipation (TC=25 C) | PD | 34 | W | TC=25 C |
| Single pulsed avalanche energy | EAS | 250 | mJ | VDD=100 V, VGS=10 V, L=10 mH, starting Tj=25 C |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0480 V |
| Reverse diode dv/dt | dv/dt | 50 | V/ns | VDS=0480 V, ISDID |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | C | |
| Thermal resistance, junction-case | RJC | 3.7 | C/W | |
| Thermal resistance, junction-ambient | RJA | 62.5 | C/W | Device mounted on 1 in FR-4 board with 2oz. Copper, still air environment, Ta=25 C |
| Drain-source breakdown voltage | BVDSS | 550 | V | VGS=0 V, ID=250 uA |
| Drain-source breakdown voltage (Tj=150 C) | BVDSS | 600 - 675 | V | VGS=0 V, ID=250 uA, Tj=150 C |
| Gate threshold voltage | VGS(th) | 3.0 - 4.5 | V | VDS=VGS, ID=250 uA |
| Drain-source on-state resistance | RDS(ON) | 0.12 - 0.16 | VGS=10 V, ID=11.5 A | |
| Drain-source on-state resistance (Tj=150 C) | RDS(ON) | 0.29 | VGS=10 V, ID=11.5 A, Tj=150 C | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V |
| Drain-source leakage current | IDSS | 10 | A | VDS=550 V, VGS=0 V |
| Input capacitance | Ciss | 1511 | pF | VGS=0 V, VDS=50 V, =100 KHz |
| Output capacitance | Coss | 145.8 | pF | VGS=0 V, VDS=50 V, =100 KHz |
| Reverse transfer capacitance | Crss | 2.9 | pF | VGS=0 V, VDS=50 V, =100 KHz |
| Turn-on delay time | td(on) | 28 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=10 A |
| Rise time | tr | 8.8 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=10 A |
| Turn-off delay time | td(off) | 37.9 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=10 A |
| Fall time | tf | 4.3 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=10 A |
| Gate-source charge | Qgs | 7.5 | nC | VGS=10 V, VDS=400 V, ID=10 A |
| Gate-drain charge | Qgd | 7.3 | nC | VGS=10 V, VDS=400 V, ID=10 A |
| Gate plateau voltage | Vplateau | 6.9 | V | VGS=10 V, VDS=400 V, ID=10 A |
| Diode forward voltage | VSD | 1.3 | V | IS=23 A, VGS=0 V |
| Reverse recovery time | trr | 122.1 | ns | IS=10 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 0.7 | C | IS=10 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 11 | A | IS=10 A, di/dt=100 A/s |
| Package Type | TO220F-C | |||
| Units/Tube | 50 | |||
| Tubes / Inner Box | 20 | |||
| Units/ Inner Box | 1000 | |||
| Inner Boxes/ Carton Box | 6 | |||
| Units/ Carton Box | 6000 |
2411220636_ORIENTAL-SEMI-OSG55R160FZF_C2762908.pdf
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