General Purpose NPN Transistor PANJIT BC817-25 R1 00001 Silicon Green Molded RoHS Directive Compliant
Key Attributes
Model Number:
BC817-25_R1_00001
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
330mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
BC817-25_R1_00001
Package:
SOT-323-3
Product Description
BC817 Series NPN General Purpose Transistors
The BC817 series are NPN epitaxial silicon planar design general purpose transistors suitable for amplifier applications. They are lead-free in compliance with EU RoHS 2011/65/EU directive and feature a green molding compound as per IEC61249 Std. (Halogen Free).
Product Attributes
- Brand: Panjit International Inc. (implied)
- Material: Silicon
- Color: Green molding compound
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
Technical Specifications
| Parameter | Symbol | BC817-16 | BC817-25 | BC817-40 | Unit | |
| MAXIMUM RATINGS | ||||||
| Collector-Emitter Voltage | VCEO | 45 | V | |||
| Collector-Base Voltage | VCBO | 50 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current - Continuous | IC | 500 | mA | |||
| Peak Collector Current | ICM | 1000 | mA | |||
| Total Power Dissipation (NOTE) | PTOT | 330 | mW | |||
| Junction and Storage Temperature Range | TJ , TSTG | -55 to +150 | °C | |||
| Thermal Resistance Junction to Ambient (NOTE) | RθJA | 375 | °C / W | |||
| Thermal Resistance Junction to Lead | RθJL | 220 | °C / W | |||
| ELECTRICAL CHARACTERISTICS ( TJ=25°C, unless otherwise noted ) | ||||||
| Collector-Emitter Breakdown Voltage ( Ic=10mA, IB=0 ) | V(BR)CEO | 45 | V | |||
| Collector-Base Breakdown Voltage ( VEB=0V, Ic=10μA ) | V(BR)CBO | 50 | V | |||
| Emitter-Base Breakdown Voltage ( IE=1μA, Ic=0 ) | V(BR)EBO | 5 | V | |||
| Emitter-Base Cutoff Current ( VEB =5V ) | IEBO | 100 | nA | |||
| Collector-Base Cutoff Current ( VCB=20V, IE=0 ) | ICBO | TJ =25°C | - | - | 5 | nA |
| TJ =150°C | - | - | 100 | μA | ||
| DC Current Gain ( Ic=100mA, VCE=1V ) | hFE | 100 | - | - | - | |
| - | 160 | - | - | |||
| - | - | 250 | - | |||
| DC Current Gain ( Ic=500mA, VCE=1V ) | hFE | 250 | - | - | - | |
| - | 400 | - | - | |||
| - | - | 600 | - | |||
| Collector-Emitter Saturation Voltage ( Ic=500mA, IB=50mA ) | VCE(SAT) | 0.7 | V | |||
| Base-Emitter Voltage ( Ic=500mA, VCE=1V ) | VBE(ON) | 1.2 | V | |||
| Collector-Base Capacitance (VCB=10V, IE=0, f=1MHz) | CCBO | 7 | - | - | pF | |
| Current Gain-Bandwidth Product ( Ic=10mA, VCE=5V, f=100MHz ) | fT | 100 | - | - | MHz | |
2410121843_PANJIT-BC817-25-R1-00001_C282269.pdf
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