86--136 6733 2386
quality Silicon NPN epitaxial transistor module PANJIT 2SC164S R1 00001 with 40V voltage and 150mA current rating factory
quality Silicon NPN epitaxial transistor module PANJIT 2SC164S R1 00001 with 40V voltage and 150mA current rating factory
quality Silicon NPN epitaxial transistor module PANJIT 2SC164S R1 00001 with 40V voltage and 150mA current rating factory

Silicon NPN epitaxial transistor module PANJIT 2SC164S R1 00001 with 40V voltage and 150mA current rating

Key Attributes
Model Number: 2SC164S_R1_00001
Product Custom Attributes
Input Resistor:
13kΩ
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
2SC164S_R1_00001
Package:
SOT-23-6
Product Description

Product Overview

The P2SC164S is an application-specific multichip circuit designed for voltage up to 40V and current up to 150mA. It features a Silicon NPN epitaxial type construction, integrating one NPN Transistor (Q1) and one NPN Base Accessible Pre-biased Transistor (Q2). This design offers advantages through reductions in component count and footprint. The product is lead-free in compliance with EU RoHS2.0 directives and uses a green molding compound as per IEC61249 Std., making it Halogen Free.

Product Attributes

  • Brand: Panjit International Inc.
  • Certifications: EU RoHS2.0 (2011/65/EU & 2015/865/EU directive), IEC61249 Std. (Halogen Free)
  • Material: Silicon NPN epitaxial type
  • Color: Green molding compound

Technical Specifications

ParameterSymbolQ1 Limit (Units)Q2 Limit (Units)Test Condition (TA=25 o C unless otherwise noted)Min.Typ.Max.Units
OFF CharacteristicsCollector-Emitter Breakdown Voltage40 (V)30 (V)IC= 1mA, IB= 0A40--V
Collector-Base Breakdown Voltage60 (V)30 (V)IC= 10uA, IE= 0A (Q1); IC= 50uA, IE= 0A (Q2)60--V
Emitter-Base Breakdown Voltage6 (V)5 (V)IE= 10u A, IC= 0A (Q1); IE= 50u A, IC= 0A (Q2)6--V
Collector Cutoff Current-50 (nA)0.5 (uA)VCE= 30V, VEB = 3V (Q1); VCB= 30V, IE= 0A (Q2)--50nA
Base Cutoff CurrentIBL50 (nA)-VCE= 30V, VEB = 3V--50nA
Emitter Cutoff CurrentIEBO-0.5 (uA)VEB= 4V--0.5uA
ON characteristicsDC Current GainhFE40 / 70 / 100 / 60 / 30100VCE= 1V, IC= 0.1mA / 1mA / 10mA / 50mA / 100mA (Q1); VCE= 5V, IC= 150mA (Q2)40-300-
Collector-Emitter Saturation VoltageVCE(SAT)200 / 300 (mV)300 (mV)IC= 10mA, IB= 1mA (Q1); IC= 10mA, IB= 1mA (Q2); IC= 50mA, IB= 5mA (Q1)--300mV
Base-Emitter Saturation VoltageVBE(SAT)850 / 950 (mV)-IC= 10mA, IB= 1mA (Q1); IC= 50mA, IB= 5mA (Q1)--950mV
Transition FrequencyfT300 (MHz)250 (MHz)VCE= 20V, IC= 10mA (Q1); VCE= 10V, IE= -5mA (Q2)300--MHz
Collector-Base CapacitanceCCBO--VCB= 5V, f= 1MHz--4pF
Emitter-Base CapacitanceCEBO--VEB= 0.5V, f= 1MHz--8pF
Input ResistanceR1-7 / 10 / 13 (Kohm)-71013Kohm
Maximum RatingsCollector-Base VoltageVCBO60 (V)30 (V)(TA=25 o C unless otherwise noted)---V
Collector-Emitter VoltageVCEO40 (V)30 (V)(TA=25 o C unless otherwise noted)---V
Emitter-Base VoltageVEBO6 (V)5 (V)(TA=25 o C unless otherwise noted)---V
Collector Current (DC)IC200 (mA)150 (mA)(TA=25 o C unless otherwise noted)---mA
Thermal CharacteristicsCollector Power DissipationPD1 (W)-(Note) (TA=25 o C unless otherwise noted)--1W
Operating Junction and Storage Temperature RangeTJ,TSTG-55~150 (oC)-(TA=25 o C unless otherwise noted)-55-150oC
Thermal Resistance from Junction to AmbientRJA125 (oC/W)-(Note) (TA=25 o C unless otherwise noted)--125oC/W

2504101957_PANJIT-2SC164S-R1-00001_C17325581.pdf

Related Products
quality Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications factory
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
quality Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor factory
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
quality Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits factory
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
quality N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities factory
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.