High Current MOSFET OSEN OSP150N08G with 80 Volt Drain Source Breakdown Voltage and Low Gate Charge Design
Key Attributes
Model Number:
OSP150N08G
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
150A
RDS(on):
4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
325pF
Output Capacitance(Coss):
1.9nF
Input Capacitance(Ciss):
5.55nF
Pd - Power Dissipation:
300W
Gate Charge(Qg):
140nC@10V
Mfr. Part #:
OSP150N08G
Package:
TO-220
Product Description
Product Overview
The OSP150N08G is an N-Channel Power Trench MOSFET from OSEN, designed for high-performance applications. It features fast switching speeds, low gate charge, and high power and current handling capabilities. This RoHS compliant component is suitable for DC to DC converters and synchronous rectification.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSP150N08G
- Revision: 21.2.10
- Certifications: RoHS compliant
Technical Specifications
| Parameters | Unit | Value | Conditions |
| Drain-Source Voltage (VDSS) | V | 80 | |
| Gate-Source Voltage-Continuous (VGS) | V | ±20 | |
| Drain Current-Continuous (ID) (Note 2) | A | 150 | |
| Drain Current-Single Pulsed (IDM) (Note 1) | A | 600 | |
| Power Dissipation (PD) (Note 2) | W | 300 | |
| Max.Operating junction temperature (Tj) | 150 | ||
| Drain-Source Breakdown Voltage (BVDSS) (Note 1) | V | 80 | ID=250µA, VGS=0V |
| Gate Threshold Voltage (VGS(th)) | V | 2.0 - 4.0 | VDS=VGS, ID=250µA |
| Drain-Source On-Resistance (RDS(on)) | mΩ | 3.5 - 4.0 | VGS=10V, ID=20A |
| Gate-Body Leakage Current (IGSS) | nA | ±100 | VGS=±20V, VDS=0 |
| Zero Gate Voltage Drain Current (IDSS) | µA | 1 | VDS=100V, VGS=0 |
| Forward Transconductance (gfs) | S | 55 | VDS=10V, ID=50A |
| Turn-On Delay Time (td(on)) | ns | 15 | VDD=40V, ID=20A, RG=5Ω |
| Rise Time (tr) | ns | 55 | |
| Turn-Off Delay Time (td(off)) | ns | 65 | |
| Fall Time (tf) | ns | 50 | |
| Total Gate Charge (Qg) | nC | 140 | VDS=40V, VGS=10V, ID=50A |
| Gate-Source Charge (Qgs) | nC | 35 | |
| Gate-Drain Charge (Qgd) | nC | 45 | |
| Input Capacitance (Ciss) | pF | 5550 | VDS=25V, VGS=0, f=1MHz |
| Output Capacitance (Coss) | pF | 1900 | |
| Reverse Transfer Capacitance (Crss) | pF | 325 | |
| Continuous Drain-Source Diode Forward Current (IS) (Note 2) | A | 150 | |
| Diode Forward On-Voltage (VSD) | V | 1.3 | IS=60A, VGS=0 |
| Thermal Resistance, Junction to Case (Rth(j-c)) | °C/W | 0.58 |
Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2: Pulse test: PW <= 300µs, duty cycle <= 2%.
2410121755_OSEN-OSP150N08G_C20607801.pdf
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