900V N Channel MOSFET OSEN 2SK2611 Featuring High Drain Current and Ruggedness for Power Electronics
Key Attributes
Model Number:
2SK2611
Product Custom Attributes
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
9A
RDS(on):
1.2Ω@10V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
58pF
Pd - Power Dissipation:
150W
Input Capacitance(Ciss):
2.18nF
Output Capacitance(Coss):
200pF
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
2SK2611
Package:
TO-3PNB
Product Description
2SK2611 900V N-CHANNEL MOSFET
The 2SK2611 is a 900V N-CHANNEL MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive, and improved dv/dt capability for enhanced ruggedness. This MOSFET is suitable for use in high-efficiency switch mode power supplies, power factor correction circuits, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Publication Order Number: [2SK2611]
- Revision: Rev 21.2.10
- Package Type: TO-3PNB
Technical Specifications
| Parameters | Ratings | Unit | Conditions |
|---|---|---|---|
| Absolute Maximum Ratings | |||
| Drain-Source Voltage (VDSS) | 900 | V | |
| Gate-Source Voltage-Continuous (VGS) | 30 | V | |
| Drain Current-Continuous (ID) (Note 2) (Tc=25C) | 9 | A | |
| Drain Current-Single Pulsed (IDM) (Note 1) | 27 | A | |
| Power Dissipation (PD) (Note 2) | 150 | W | |
| Max.Operating junction temperature (Tj) | 150 | ||
| Electrical Characteristics (Tc=25C unless otherwise noted) | |||
| Static Characteristics | |||
| Drain-Source Breakdown Voltage Current (BVDSS) (Note 1) | 900 | V | ID=250A VGS=0VTJ=25C |
| Gate Threshold Voltage (VGS(th)) | 2.0 -- 4.0 | V | VDS=VGSID=250A |
| Drain-Source On-Resistance (RDS(on)) | -- 1.2 -- | VGS=10VID=4A | |
| Gate-Body Leakage Current (IGSS) | -- -- 100 | nA | VGS=30VVDS=0 |
| Zero Gate Voltage Drain Current (IDSS) | -- -- 10 | A | VDS=900VVGS=0 |
| Forward Transconductance (gfs) | -- 7.0 -- | S | VDS=15VID=4A |
| Switching Characteristics | |||
| Turn-On Delay Time (Td(on)) | -- 55 -- | ns | VDS=450VID=9A RG=25Note 2 |
| Rise Time (Tr) | -- 130 -- | ns | |
| Turn-Off Delay Time (Td(off)) | -- 110 -- | ns | |
| Fall Time (Tf) | -- 80 -- | ns | |
| Total Gate Charge (Qg) | -- 70 -- | nC | VDS=400V VGS=10V ID=9ANote 2 |
| Gate-Source Charge (Qgs) | -- 35 -- | nC | |
| Gate-Drain Charge (Qgd) | -- 27 -- | nC | |
| Dynamic Characteristics | |||
| Input Capacitance (Ciss) | -- 2180 -- | pF | VDS=25VVGS=0 f=1MHz |
| Output Capacitance (Coss) | -- 200 -- | pF | |
| Reverse Transfer Capacitance (Crss) | -- 58 -- | pF | |
| Continuous Drain-Source Diode Forward Current (IS) (Note 2) | -- -- 9 | A | |
| Diode Forward On-Voltage (VSD) | -- -- 1.4 | V | IS=9AVGS=0 |
| Thermal Resistance, Junction to Case (Rth(j-c)) | -- -- 0.83 | /W | |
Notes:
Note 1: Repetitive Rating : Pulse width limited by maximum junction temperature
Note 2: Pulse test: PW <= 300us , duty cycle <= 2%
2506121200_OSEN-2SK2611_C49055735.pdf
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