Panjit 2N7002KDW R1 00001 60V N Channel MOSFET with Ultra Low On Resistance and Low Leakage Current
Key Attributes
Model Number:
2N7002KDW_R1_00001
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
4Ω@4.5V,200mA
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
2 N-Channel
Output Capacitance(Coss):
35pF
Input Capacitance(Ciss):
40pF
Pd - Power Dissipation:
200mW
Gate Charge(Qg):
800pC@4.5V
Mfr. Part #:
2N7002KDW_R1_00001
Package:
SOT-363
Product Description
Product Overview
The 2N7002KDW is a 60V N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers very low leakage current in off-condition, making it ideal for battery-operated systems and solid-state relays. This ESD-protected device is suitable for driving relays, displays, lamps, solenoids, and memories.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
- ESD Protected: 2KV HBM
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=10uA | 60 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | - | 2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V, ID=200mA | - | - | 4.0 | |
| VGS=10V, ID=500mA | - | - | 3.0 | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | - | - | 1 | uA |
| Gate Body Leakage | IGSS | VGS=+20V, VDS=0V | - | - | +10 | uA |
| Forward Transconductance | gfS | VDS=15V, ID=250mA | 100 | - | - | mS |
| Total Gate Charge | Qg | VDS=15V, ID=200mA, VGS=4.5V | - | - | 0.8 | nC |
| Turn-On Delay Time | ton | VDD=30V, RL=150, ID=200mA, VGEN=10V, RG=10 | - | - | 20 | ns |
| Turn-Off Delay Time | toff | VDD=30V, RL=150, ID=200mA, VGEN=10V, RG=10 | - | - | 40 | ns |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | - | - | 35 | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | - | - | 10 | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | - | - | 5 | pF |
| Diode Forward Voltage | VSD | IS=200mA, VGS=0V | - | 0.82 | 1.3 | V |
| Continuous Diode Forward Current | IS | - | - | - | 115 | mA |
| Pulsed Diode Forward Current | ISM | - | - | - | 800 | mA |
| Drain-Source Voltage | VDS | - | - | - | 60 | V |
| Gate-Source Voltage | VGS | - | - | - | +20 | V |
| Continuous Drain Current | ID | - | - | - | 115 | mA |
| Pulsed Drain Current | IDM | - | - | - | 800 | mA |
| Maximum Power Dissipation | PD | TA=25C | - | - | 200 | mW |
| Maximum Power Dissipation | PD | TA=75C | - | - | 120 | mW |
| Operating Junction and Storage Temperature Range | TJ, TSTG | - | -55 | - | +150 | C |
| Junction-to-Ambient Thermal Resistance (PCB mounted) | RJA | - | - | - | 625 | C/W |
2410121543_PANJIT-2N7002KDW-R1-00001_C106992.pdf
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