Green molding compound 20V n channel mosfet PANJIT PJT7808 R1 00001 for pwm and switch load circuits
Key Attributes
Model Number:
PJT7808_R1_00001
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
500mA
RDS(on):
3Ω@1.2V,20mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
2 N-Channel
Output Capacitance(Coss):
19pF
Input Capacitance(Ciss):
67pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
1.4nC@4.5V
Mfr. Part #:
PJT7808_R1_00001
Package:
SOT-363
Product Description
Product Overview
The PPJT7808 is a 20V N-Channel Enhancement Mode MOSFET designed for low voltage drive applications. Featuring advanced trench process technology and ESD protection, it is specially suited for switch load and PWM applications. This product is lead-free and manufactured with a green molding compound, complying with EU RoHS and IEC61249 standards.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
- Material: Green molding compound
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | +10 | V | |||
| Continuous Drain Current | ID | 500 | mA | |||
| Pulsed Drain Current | IDM | (Note 4) | 1000 | mA | ||
| Power Dissipation | PD | Ta=25oC | 350 | mW | ||
| Derate above 25oC | 2.8 | mW/ oC | ||||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | oC | ||
| Typical Thermal resistance - Junction to Ambient | RJA | (Note 3) | 357 | oC/W | ||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 0.3 | 0.65 | 0.9 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V, ID=500mA | - | 280 | 400 | m |
| VGS=2.5V, ID=200mA | - | 350 | 650 | m | ||
| VGS=1.8V, ID=100mA | - | 400 | 800 | m | ||
| VGS=1.5V, ID=50mA | - | 500 | 1200 | m | ||
| VGS=1.2V, ID=20mA | - | 700 | 3000 | m | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=16V, VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+8V, VDS=0V | - | +0.5 | +10 | uA |
| Total Gate Charge | Qg | VDS=10V, ID=500mA, VGS=4.5V (Note 1,2) | - | 1.4 | - | nC |
| Gate-Source Charge | Qgs | - | 0.22 | - | ||
| Gate-Drain Charge | Qg d | - | 0.21 | - | ||
| Input Capacitance | Ciss | VDS=10V, VGS=0V, f=1.0MHZ | - | 67 | - | pF |
| Output Capacitance | Coss | - | 19 | - | ||
| Reverse Transfer Capacitance | Crss | - | 6 | - | ||
| Switching Times | td(on) | VDD=10V, ID=150mA, VGS=4.0V, RG=10 (Note 1,2) | - | 2.8 | - | ns |
| tr | - | 20 | - | |||
| td(off) | - | 23 | - | |||
| tf | - | 23 | - | |||
| Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current | IS | --- | - | 500 | mA | |
| Diode Forward Voltage | VSD | IS=500mA, VGS=0V | - | 0.87 | 1.3 | V |
2411200006_PANJIT-PJT7808-R1-00001_C17309541.pdf
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