Compact SOT 23 Package P Channel MOSFET PAKER SI2307 for Electronic Power Management Solutions
Key Attributes
Model Number:
SI2307
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.6A
RDS(on):
68mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
45pF
Number:
1 P-Channel
Input Capacitance(Ciss):
366pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
7.5nC
Mfr. Part #:
SI2307
Package:
SOT-23
Product Description
Product Overview
The SI2307 is a P-Channel Enhancement Mode Power MOSFET in a SOT-23 Small Outline Plastic Package. It features a high density cell design for ultra-low on-resistance and is manufactured using advanced trench process technology. This MOSFET is halogen-free and RoHS compliant, making it suitable for various electronic applications requiring efficient power management.
Product Attributes
- Brand: (Parker Microelectronics)
- Origin: Shenzhen, China
- Package Type: SOT-23 Small Outline Plastic Package
- Material: Epoxy UL: 94V-0
- Certifications: Halogen free and RoHS compliant
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Maximum Ratings & Thermal Characteristics | |||||
| Drain-Source Breakdown Voltage | VGS=0VID=-250A | -30 | -- | -- | V |
| Gate Threshold Voltage | VDS=VGSID=-250A | -1.0 | -1.5 | -2.5 | V |
| Zero Gate Voltage Drain Current | VDS=-30VVGS=0V | -- | -- | -1 | uA |
| Gate-Body Leakage Current | VGS=20VVDS=0V | -- | -- | 100 | nA |
| Drain-Source On-State Resistance | VGS=-4.5VID=-2A | -- | 68 | 88 | m |
| Drain-Source On-State Resistance | VGS=-10V ID=-3A | -- | 90 | 138 | m |
| Diode Continuous Forward Current | Tc=25C | -- | -3 | -- | A |
| Pulse Drain Current | Tc=25C | -- | -13 | -- | A |
| Continuous Drain Current@GS=10V | Tc=25C | -- | -3.6 | -- | A |
| Maximum Power Dissipation | Tc=25C | -- | 1.25 | -- | W |
| Junction Temperature | -- | -- | -- | 150 | C |
| Storage Temperature Range | -- | -50 | -- | 155 | C |
| Thermal Resistance Junction-Ambient | ((*1 in2 Pad of 2-oz Copper), Max.) | -- | -- | 113 | C/W |
| Electrical Characteristics | |||||
| Input Capacitance | VDS=-10VVGS=0V f=1MHz | -- | 366 | -- | pF |
| Output Capacitance | -- | -- | 60 | -- | pF |
| Reverse Transfer Capacitance | -- | -- | 45 | -- | pF |
| Dynamic Electrical Characteristics | |||||
| Total Gate Charge | VDS=-15VID=-3A VGS=-10V | -- | 7.5 | -- | nC |
| Gate Source Charge | -- | -- | 1.65 | -- | nC |
| Gate Drain Charge | -- | -- | 1.2 | -- | nC |
| Switching Characteristics | |||||
| Turn-on Delay Time | VDS=-15VID=-1A VGS=-10VRG=2.5 | -- | 3.3 | -- | nS |
| Turn-on Rise Time | -- | 17.5 | -- | nS | |
| Turn-Off Delay Time | -- | 18 | -- | nS | |
| Turn-Off Fall Time | -- | 23 | -- | nS | |
| Source- Drain Diode Characteristics | |||||
| Forward on voltage | Tj=25Is=-3A | -- | -0.85 | -1.2 | V |
Mechanical Data
Package Outline Dimensions: SOT-23
| SYMBOL | MILLIMETER | INCHES | ||
|---|---|---|---|---|
| MIN | MAX | MIN | MAX | |
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| E | 2.250 | 2.550 | 0.089 | 0.100 |
| E1 | 1.200 | 1.400 | 0.047 | 0.055 |
| e | 0.950 BSC | 0.037 BSC | ||
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| 0 | 8 | 0 | 8 |
Packing Quantity: 3000
Packing Description: Tape/Reel, 7" reel
2410122013_PAKER-SI2307_C5278890.pdf
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