20V P Channel Enhancement Mode MOSFET PANJIT PJ2301 AU R1 000A1 for Switch Load and PWM Applications
Key Attributes
Model Number:
PJ2301-AU_R1_000A1
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
190mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
43pF
Number:
1 P-Channel
Input Capacitance(Ciss):
416pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
5.4nC@4.5V
Mfr. Part #:
PJ2301-AU_R1_000A1
Package:
SOT-23
Product Description
Product Overview
The PPJ2301-AU is a 20V P-Channel Enhancement Mode MOSFET from Panjit International Inc., designed for switch load and PWM applications. It features advanced trench process technology, AEC-Q101 qualification, and compliance with EU RoHS directives and IEC61249 standards for green molding compound. This MOSFET offers low on-resistance at various gate-source voltages.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: TS16949, AEC-Q101 qualified, EU RoHS 2011/65/EU directive compliant, IEC61249 Std. (Halogen Free)
- Package: SOT-23
- Material: Green molding compound (Halogen Free)
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source On-State Resistance | RDS(on) | VGS=-4.5V, ID=-3.1A | - | 84 | 100 | m |
| VGS=-2.5V, ID=-2.0A | - | 104 | 135 | V | ||
| VGS=-1.8V, ID=-1.1A | - | 134 | 190 | V | ||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250uA | -0.4 | -0.71 | -1.2 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | - | -0.01 | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+12V, VDS=0V | - | +10 | +100 | nA |
| Continuous Drain Current | ID | Ta=25oC | - | - | -3.1 | A |
| Pulsed Drain Current | IDM | - | - | - | -12.4 | A |
| Power Dissipation | PD | Ta=25oC | - | - | 1.25 | W |
| Derate above 25oC | - | - | - | - | 10 | mW/ oC |
| Operating Junction and Storage Temperature Range | TJ,TSTG | - | -55 | - | 150 | oC |
| Typical Thermal Resistance - Junction to Ambient | RJA | (Note 3) | - | - | 100 | oC/W |
| Total Gate Charge | Qg | VDS=-10V, ID=-3.1A, VGS=-4.5V (Note 1,2) | - | 5.4 | - | nC |
| Gate-Source Charge | Qgs | - | - | 0.7 | - | - |
| Gate-Drain Charge | Qg d | - | - | 1.3 | - | - |
| Input Capacitance | Ciss | VDS=-10V, VGS=0V, f=1.0MHZ | - | 416 | - | pF |
| Output Capacitance | Coss | - | - | 43 | - | - |
| Reverse Transfer Capacitance | Crss | - | - | 32 | - | - |
| Switching Turn-On Delay Time | td(on) | VDD=-10V, ID=-3.1A, VGS=-4.5V, RG=6 (Note 1,2) | - | 4 | - | ns |
| Turn-On Rise Time | tr | - | - | 27 | - | - |
| Turn-Off Delay Time | td(off) | - | - | 78 | - | - |
| Turn-Off Fall Time | tf | - | - | 45 | - | - |
| Drain-Source Diode Forward Current | IS | - | - | - | -1.5 | A |
| Diode Forward Voltage | VSD | IS=-1.0A, VGS=0V | - | 0.8 | -1.2 | V |
2410121321_PANJIT-PJ2301-AU-R1-000A1_C393454.pdf
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