30V N Channel MOSFET PANJIT PJE8404 R1 00001 featuring green molding compound and EU RoHS compliance
Key Attributes
Model Number:
PJE8404_R1_00001
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
600mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
600mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 N-channel
Output Capacitance(Coss):
19pF
Input Capacitance(Ciss):
93pF
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
1.5nC@4.5V
Mfr. Part #:
PJE8404_R1_00001
Package:
SOT-523
Product Description
Product Overview
The PPJE8404 is a 30V N-Channel Enhancement Mode MOSFET with ESD protection. It features advanced trench process technology and is specifically designed for switch load and PWM applications. This MOSFET offers low on-state resistance at various gate-source voltages and is compliant with EU RoHS 2011/65/EU directive and IEC61249 standard for green molding compound (Halogen Free).
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
- Material: Green molding compound
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | +8 | V | |||
| Continuous Drain Current | ID | 0.6 | A | |||
| Pulsed Drain Current | IDM | 2.4 | A | |||
| Power Dissipation | PD | Ta=25C | 300 | mW | ||
| Derate above 25C | 2.4 | mW/C | ||||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | C | ||
| Typical Thermal Resistance - Junction to Ambient (Note 3) | RJA | 417 | C/W | |||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 0.5 | 0.79 | 1.3 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V, ID=0.6A | 177 | 220 | m | |
| VGS=2.5V, ID=0.4A | 223 | 290 | ||||
| VGS=1.8V, ID=0.1A | 330 | 600 | ||||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | - | 0.01 | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+8V, VDS=0V | - | +1.5 | +10 | uA |
| Total Gate Charge | Qg | VDS=15V, ID=0.6A, VGS=4.5V (Note 1,2) | 1.5 | - | nC | |
| Gate-Source Charge | Qgs | 0.3 | - | |||
| Gate-Drain Charge | Qgd | 0.3 | - | |||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1.0MHZ | 93 | - | pF | |
| Output Capacitance | Coss | 19 | - | |||
| Reverse Transfer Capacitance | Crss | 6 | - | |||
| Switching Times | td(on) | VDD=15V, ID=0.6A, VGS=4.5V, RG=6 (Note 1,2) | 6 | - | ns | |
| tr | 33 | - | ||||
| td(off) | 37 | - | ||||
| tf | 32 | - | ||||
| Max. Continuous Drain-Source Diode Forward Current | IS | --- | - | 0.4 | A | |
| Diode Forward Voltage | VSD | IS=1A, VGS=0V | - | 0.81 | 1.2 | V |
2410121321_PANJIT-PJE8404-R1-00001_C2902551.pdf
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