High Frequency Amplification and Switching Transistor PANASONIC 2SC5632G0L Silicon NPN with S Mini Package
Product Overview
The 2SC5632G is a silicon NPN epitaxial planar type transistor designed for high-frequency amplification and switching applications. It features a high transition frequency (fT) and is housed in an S-Mini type package, enabling equipment downsizing and automatic insertion via tape packing. This product complies with the RoHS Directive (EU 2002/95/EC).
Product Attributes
- Product Type: Silicon NPN Epitaxial Planar Type Transistor
- Package: S-Mini Type (SMini3-F2)
- Marking Symbol: 2R
- Compliance: RoHS Directive (EU 2002/95/EC)
- Publication Date: June 2007
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-base voltage (Emitter open) | VCBO | IC = 100 A, IE = 0 | 15 | V | ||
| Emitter-base cutoff current (Collector open) | IEBO | VEB = 2 V, IC = 0 | 2 | A | ||
| Forward current transfer ratio | hFE | VCE = 4 V, IC = 2 mA | 100 | 350 | ||
| hFE ratio | hFE | hFE2: VCE = 4 V, IC = 100 A hFE1: VCE = 4 V, IC = 2 mA | 0.6 | 1.5 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC = 20 mA, IB = 4 mA | 0.1 | V | ||
| Transition frequency | fT | VCE = 5 V, IC = 15 mA, f = 200 MHz | 0.6 | 1.1 | GHz | |
| Collector output capacitance (Common base, input open circuited) | Cob | VCB = 10 V, IE = 0, f = 1 MHz | 1.0 | 1.6 | pF |
| Parameter | Rating | Unit |
|---|---|---|
| Collector-base voltage (Emitter open) | 15 | V |
| Collector-emitter voltage (Base open) | 8 | V |
| Emitter-base voltage (Collector open) | 3 | V |
| Collector current | 50 | mA |
| Collector power dissipation | 150 | mW |
| Junction temperature | 150 | C |
| Storage temperature | -55 to +150 | C |
Package Dimensions (SMini3-F2)
2410301852_PANASONIC-2SC5632G0L_C20491304.pdf
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