High Frequency Amplification and Switching Transistor PANASONIC 2SC5632G0L Silicon NPN with S Mini Package

Key Attributes
Model Number: 2SC5632G0L
Product Custom Attributes
Type:
NPN
Number:
1 NPN
Collector - Emitter Voltage VCEO:
8V
Mfr. Part #:
2SC5632G0L
Package:
SMini3-F2
Product Description

Product Overview

The 2SC5632G is a silicon NPN epitaxial planar type transistor designed for high-frequency amplification and switching applications. It features a high transition frequency (fT) and is housed in an S-Mini type package, enabling equipment downsizing and automatic insertion via tape packing. This product complies with the RoHS Directive (EU 2002/95/EC).

Product Attributes

  • Product Type: Silicon NPN Epitaxial Planar Type Transistor
  • Package: S-Mini Type (SMini3-F2)
  • Marking Symbol: 2R
  • Compliance: RoHS Directive (EU 2002/95/EC)
  • Publication Date: June 2007

Technical Specifications

Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 100 A, IE = 0 15 V
Emitter-base cutoff current (Collector open) IEBO VEB = 2 V, IC = 0 2 A
Forward current transfer ratio hFE VCE = 4 V, IC = 2 mA 100 350
hFE ratio hFE hFE2: VCE = 4 V, IC = 100 A
hFE1: VCE = 4 V, IC = 2 mA
0.6 1.5
Collector-emitter saturation voltage VCE(sat) IC = 20 mA, IB = 4 mA 0.1 V
Transition frequency fT VCE = 5 V, IC = 15 mA, f = 200 MHz 0.6 1.1 GHz
Collector output capacitance (Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz 1.0 1.6 pF
Parameter Rating Unit
Collector-base voltage (Emitter open) 15 V
Collector-emitter voltage (Base open) 8 V
Emitter-base voltage (Collector open) 3 V
Collector current 50 mA
Collector power dissipation 150 mW
Junction temperature 150 C
Storage temperature -55 to +150 C

Package Dimensions (SMini3-F2)

High Frequency Amplification and Switching Transistor PANASONIC 2SC5632G0L Silicon NPN with S Mini Package 02410301852_PANASONIC-2SC5632G0L_C20491304.pdf

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