General Purpose NPN Switching Transistor PANJIT MMBT3904 with 40V Collector Emitter Voltage and 200mA Current
Key Attributes
Model Number:
MMBT3904
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3904
Package:
SOT-23
Product Description
MMBT3904 NPN General Purpose Switching Transistor
The MMBT3904 is an NPN epitaxial silicon planar transistor designed for general-purpose switching applications. It offers a collector-emitter voltage of 40V and a collector current of 200mA, with a transition frequency exceeding 300MHz. This device is lead-free and complies with EU RoHS 2.0 standards.
Product Attributes
- Brand: Panjit International Inc.
- Material: Silicon
- Color: Green molding compound (as per IEC 61249 standard)
- Certifications: EU RoHS 2.0
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | 40 | V | |||
| Collector-Base Voltage (VCBO) | 60 | V | |||
| Emitter-Base Voltage (VEBO) | 0.6 | V | |||
| Collector Current (IC) | Continuous | 200 | mA | ||
| Maximum Power Dissipation (PTOT) | Note 1 (Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.) | 225 | mW | ||
| Junction Temperature (TJ) | -55 | 150 | °C | ||
| Storage Temperature (TSTG) | -55 | 150 | °C | ||
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | IC = 10mA, IB = 0 | 40 | V | ||
| Collector-Base Breakdown Voltage (V(BR)CBO) | IC = 10uA, IE = 0 | 60 | V | ||
| Emitter-Base Breakdown Voltage (V(BR)EBO) | IE = 10uA, IC = 0 | 0.6 | V | ||
| Collector Cut-off Current (ICEX) | VCE = 30V, VBE = 0.3V | 50 | nA | ||
| Base Cut-off Current (IBL) | VCE = 30V, VBE = 0.3V | 50 | nA | ||
| DC Current Gain (hFE) | VCE = 1V, IC = 1mA | 100 | 300 | ||
| DC Current Gain (hFE) | VCE = 1V, IC = 10mA | 70 | |||
| DC Current Gain (hFE) | VCE = 1V, IC = 100mA | 30 | |||
| Collector-Emitter Saturation Voltage (VCE(SAT)) | IC = 10mA, IB = 1mA | 0.2 | 0.3 | V | |
| Collector-Emitter Saturation Voltage (VCE(SAT)) | IC = 50mA, IB = 5mA | 0.3 | 0.4 | V | |
| Base-Emitter Saturation Voltage (VBE(SAT)) | IC = 10mA, IB = 1mA | 0.65 | 0.75 | V | |
| Base-Emitter Saturation Voltage (VBE(SAT)) | IC = 50mA, IB = 5mA | 0.7 | 0.85 | V | |
| Collector-Emitter Capacitance (Cobo) | IC = 10mA, VBC = 5V, f = 1MHz | 4.0 | pF | ||
| Collector-Base Capacitance (Cobo) | VCB = 10V, f = 1MHz | 4.0 | pF | ||
| Emitter-Base Capacitance (Cebo) | VEB = 5V, f = 1MHz | 0.8 | pF | ||
| Rise Time (tr) | VCC = 3V, IC = 10mA, IB1 = 1mA, IB2 = -1mA | 35 | ns | ||
| Fall Time (tf) | VCC = 3V, IC = 10mA, IB1 = 1mA, IB2 = -1mA | 50 | ns | ||
| Storage Time (ts) | VCC = 3V, IC = 10mA, IB1 = 1mA, IB2 = -1mA | 200 | ns | ||
| Transition Frequency (fT) | IC = 10mA, VCE = 20V, f = 100MHz | 300 | MHz |
2412021737_PANJIT-MMBT3904_C461745.pdf
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