20V P Channel Enhancement Mode MOSFET PANJIT PJA3419 with ESD Protection and Green Molding Compound
Key Attributes
Model Number:
PJA3419
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
50mΩ@10V
Gate Threshold Voltage (Vgs(th)):
770mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
47pF
Number:
1 P-Channel
Output Capacitance(Coss):
70pF
Input Capacitance(Ciss):
602pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
6.9nC@4.5V
Mfr. Part #:
PJA3419
Package:
SOT-23
Product Description
Product Overview
The PJA3419 is a 20V P-Channel Enhancement Mode MOSFET featuring ESD protection. It is designed for switch load and PWM applications, offering low RDS(ON) at various gate-source voltages and drain currents. The device utilizes Advanced Trench Process Technology and is compliant with EU RoHS 2011/65/EU and IEC61249 green molding compound standards.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS 2011/65/EU, IEC61249 (Halogen Free), ESD Protected 2KV HBM
- Material: Green molding compound
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Maximum Ratings and Thermal Characteristics (TA=25 o C unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | +12 | V | |||
| Continuous Drain Current | ID | -4.0 | A | |||
| Pulsed Drain Current (Note 4) | IDM | -16 | A | |||
| Power Dissipation | PD | Ta=25oC | 1.25 | W | ||
| Derate above 25oC | 10 | mW/ oC | ||||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | oC | ||
| Typical Thermal resistance - Junction to Ambient (Note 3) | RJA | 100 | oC/W | |||
| Electrical Characteristics (TA=25 o C unless otherwise noted) | ||||||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250uA | -0.5 | -1.2 | V | |
| Drain-Source On-State Resistance | RDS(on) | VGS=-10V, ID=-4.0A | 50 | 60 | m | |
| VGS=-4.5V, ID=-3.3A | 58 | 70 | ||||
| VGS=-2.5V, ID=-2.0A | 80 | 96 | ||||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=+8V, VDS=0V | +10 | uA | ||
| Dynamic (Note 5) | ||||||
| Total Gate Charge | Qg | VDS=-10V, ID=-4.0A, VGS=-4.5V (Note 1,2) | 6.9 | nC | ||
| Gate-Source Charge | Qgs | 1.5 | ||||
| Gate-Drain Charge | Qg d | 1.9 | ||||
| Capacitance | Ciss, Coss, Crss | VDS=-10V, VGS=0V, f=1.0MHZ | 602 | pF | ||
| 70 | ||||||
| 47 | ||||||
| Switching Characteristics (Note 1,2) | ||||||
| Delay and Rise/Fall Times | td(on), tr, td(off), tf | VDD=-10V, ID=-4.0A, VGS=-4.5V, RG=3 | 8.8 | ns | ||
| 66 | ||||||
| 29 | ||||||
| 14 | ||||||
| Drain-Source Diode | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | -1.5 | A | |||
| Diode Forward Voltage | VSD | IS=-1.0A, VGS=0V | -0.79 | -1.0 | V | |
2410121332_PANJIT-PJA3419_C525635.pdf
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