PNP Silicon Transistor PANJIT MMBT5401 R1 00101 High Voltage SOT23 Plastic Case Lead Free Component
Key Attributes
Model Number:
MMBT5401_R1_00101
Product Custom Attributes
Current - Collector Cutoff:
50uA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
300MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT5401_R1_00101
Package:
SOT-23
Product Description
MMBT5401 HIGH VOLTAGE TRANSISTOR PNP Silicon
The MMBT5401 is a high voltage PNP silicon transistor designed for various applications. It features a SOT-23 plastic case and is lead-free in compliance with EU RoHS 2.0 and uses green molding compound as per IEC 61249 standard.
Product Attributes
- Case: SOT-23 plastic case
- Terminals: Solderable per MIL-STD-750, Method 2026
- Standard packaging: 8mm tape
- Approx. Weight: 0.0003 ounces, 0.008 grams
- Marking: M5A
- Certifications: Lead free in compliance with EU RoHS 2.0, Green molding compound as per IEC 61249 standard
Technical Specifications
| Symbol | Unit | Description | Value |
| MAXIMUM RATINGS | |||
| VCEO | V | Collector-Emitter Voltage | -50 |
| VCBO | V | Collector-Base Voltage | -60 |
| VEBO | V | Emitter-Base Voltage | -0.5 |
| IC | A | Continuous Collector Current | -0.120 |
| ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) | |||
| V(BR)CEO | V | Collector-Emitter Breakdown Voltage (IC = -0.1mA, IB = 0) | -50 |
| V(BR)CBO | V | Collector-Base Breakdown Voltage (IC = -0.1mA, IE = 0) | -60 |
| V(BR)EBO | V | Emitter-Base Breakdown Voltage (IE = -0.1mA, IC = 0) | -0.5 |
| ICBO | A | Collector Cut-off Current (VCE = -50V, IE = 0) | -50 |
| ICBO | A | Collector Cut-off Current (VCE = -50V, IE = 0) | -50 |
| hFE | DC Current Gain (IC = -10mA, VCE = -0.5V) | 40-200 | |
| hFE | DC Current Gain (IC = -50mA, VCE = -0.5V) | 25-100 | |
| VCE(SAT) | V | Collector-Emitter Saturation Voltage (IC = -10mA, IB = -1mA) | -0.20 |
| VCE(SAT) | V | Collector-Emitter Saturation Voltage (IC = -50mA, IB = -5mA) | -0.30 |
| VBE(SAT) | V | Base-Emitter Saturation Voltage (IC = -10mA, IB = -1mA) | -0.75 |
| VBE(SAT) | V | Base-Emitter Saturation Voltage (IC = -50mA, IB = -5mA) | -0.95 |
| fT | MHz | Current Gain Bandwidth Product (IC = -10mA, VCE = -10V) | 100 |
| Cob | pF | Output Capacitance (VCE = -10V, IE = 0, f = 1MHz) | 6.0 |
| hfe | Small Signal Current Gain (IC = -10mA, VCE = -10V, f = 100MHz) | 4 | |
| Rs | Series Resistance (IC = -10mA, VCE = -0.5V, f = 1MHz) | 0.8 | |
| THERMAL CHARACTERISTICS | |||
| PD | W | Power Dissipation (TA = 25C) | 0.28 |
| RJA | C/W | Thermal Resistance Junction to Ambient | 165 |
| PD | W | Power Dissipation (TA = 25C) | 2.4 |
| RJA | C/W | Thermal Resistance Junction to Ambient | 71 |
| TJ, TSTG | C | Operating Junction and Storage Temperature Range | -55 to +150 |
Mounting Pad Layout
| Unit | Inch(mm) |
| 0.031 MIN. (0.80) MIN. | 0.037 (0.95) |
| 0.043 (1.10) | 0.078 (2.00) |
| 0.035 MIN. (0.90) MIN. | 0.043 (1.10) |
| 0.106 (2.70) |
Order Information
Packing information:
- T/R - 12K per 13" plastic Reel
- T/R - 3K per 7" plastic Reel
Format: Part No_packing code_Version
Example: MMBT5401_R1_00001
2410122016_PANJIT-MMBT5401-R1-00101_C20616383.pdf
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