Switching transistor PANJIT MMBT3906 PNP epitaxial silicon planar design with 40 volt collector emitter voltage rating
Key Attributes
Model Number:
MMBT3906
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
330mW
Transition Frequency(fT):
250MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT3906
Package:
SOT-23
Product Description
MMBT3906 PNP General Purpose Switching Transistor
The MMBT3906 is a PNP epitaxial silicon planar design transistor designed for general-purpose switching applications. It offers a collector-emitter voltage of -40V and a continuous collector current of -200mA. This transistor is lead-free, compliant with EU RoHS 2.0, and uses a green molding compound. It is available in a SOT-23 package.
Product Attributes
- Brand: Panjit International Inc.
- Material: Epitaxial silicon, planar design
- Color: Green molding compound
- Certifications: EU RoHS 2.0 compliant, IEC 61249 standard
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Ratings | ||||||
| Collector - Emitter Voltage | VCEO | -40 | V | |||
| Collector - Base Voltage | VCBO | -40 | V | |||
| Emitter - Base Voltage | VEBO | -5 | V | |||
| Collector Current - Continuous | IC | -200 | mA | |||
| Max Power Dissipation (Note 1) | PTOT | (Note 1) | 330 | mW | ||
| Thermal Resistance, Junction to Ambient | RJA | 375 | C/W | |||
| Operating Junction Temperature and Storage Temperature Range | TJ,TSTG | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Collector - Emitter Breakdown Voltage | V(BR)CEO | IC=-1mA, IB=0 | -40 | V | ||
| Collector - Base Breakdown Voltage | V(BR)CBO | IC=-10uA, IE=0 | -40 | V | ||
| Emitter - Base Breakdown Voltage | V(BR)EBO | IE=-10uA, IC=0 | -5 | V | ||
| Base Cutoff Current | IBL | VCE=-30V, VEB=-3V | -50 | nA | ||
| Collector Cutoff Current | ICEX | VCE=-30V, VEB=-3V | -50 | nA | ||
| DC Current Gain | hFE | IC=-0.1mA, VCE=-1V | 60 | 300 | ||
| DC Current Gain | hFE | IC=-1mA, VCE=-1V | 80 | |||
| DC Current Gain | hFE | IC=-10mA, VCE=-1V | 100 | |||
| DC Current Gain | hFE | IC=-50mA, VCE=-1V | 60 | |||
| DC Current Gain | hFE | IC=-100mA, VCE=-1V | 30 | |||
| Collector - Emitter Saturation Voltage | VCE(SAT) | IC=-10mA, IB=-1mA | -0.25 | V | ||
| Collector - Emitter Saturation Voltage | VCE(SAT) | IC=-50mA, IB=-5mA | -0.4 | V | ||
| Base - Emitter Saturation Voltage | VBE(SAT) | IC=-10mA, IB=-1mA | -0.65 | V | ||
| Base - Emitter Saturation Voltage | VBE(SAT) | IC=-50mA, IB=-5mA | -0.85 | -0.95 | V | |
| Collector - Base Capacitance | CCBO | VCB=-5V, IE=0, f=1MHz | 4.5 | pF | ||
| Emitter - Base Capacitance | CEBO | VEB=-0.5V, IC=0, f=1MHz | 10 | pF | ||
| Delay Time | td | VCC=-3V,VBE=-0.5V, IC=-10mA,IB=-1mA | 35 | ns | ||
| Rise Time | tr | VCC=-3V,VBE=-0.5V, IC=-10mA,IB=-1mA | 35 | ns | ||
| Storage Time | ts | VCC=-3V,IC=-10mA, IB1=IB2=-1mA | 225 | ns | ||
| Fall Time | tf | VCC=-3V,IC=-10mA, IB1=IB2=-1mA | 75 | ns | ||
| Current Gain-Bandwidth Product | fT | IC=-10mA,VCE=-20V, f=100MHz | 250 | MHz | ||
2410121513_PANJIT-MMBT3906_C2892231.pdf
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