Low On State Resistance N Channel MOSFET PIELENST AO3400-L Ideal for Uninterruptible Power Supplies

Key Attributes
Model Number: AO3400-L
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
78pF
Number:
1 N-channel
Output Capacitance(Coss):
100pF
Input Capacitance(Ciss):
825pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
AO3400-L
Package:
SOT-23
Product Description

AO3400-L N Channel Enhancement Mode MOSFET

The AO3400-L is an N-Channel Enhancement Mode MOSFET designed for various applications including battery protection, load switching, and uninterruptible power supplies. It offers a low on-state resistance and robust performance characteristics.

Product Attributes

  • Brand: SZPIELENST
  • Model: AO3400-L
  • Channel Type: N Channel
  • Mode: Enhancement Mode
  • Package: SOT23

Technical Specifications

Parameter Symbol Condition Min Typ Max Unit
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 30 33 - V
Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - 1 A
Gate-Body Leakage Current IGSS VGS=12V,VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250A 0.7 0.9 1.4 V
Drain-Source On-State Resistance RDS(ON) VGS=2.5V, ID=4A - 41 55 m
Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=5A - 32 42 m
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5.8A - 28 30 m
Forward Transconductance gFS VDS=5V,ID=5A 10 - - S
Input Capacitance Clss VDS=15V,VGS=0V, F=1.0MHz - 825 - PF
Output Capacitance Coss - - 100 - PF
Reverse Transfer Capacitance Crss - - 78 - PF
Turn-on Delay Time td(on) VDD=15V, RL=2.7, VGS=10V,RGEN=3 - 3.3 - nS
Turn-on Rise Time tr - - 4.8 - nS
Turn-Off Delay Time td(off) - - 26 - nS
Turn-Off Fall Time tf - - 4 - nS
Total Gate Charge Qg VDS=15V,ID=5.8A, VGS=4.5V - 10 - nC
Gate-Source Charge Qgs - - 1.6 - nC
Gate-Drain Charge Qg d - - 3.1 - nC
Diode Forward Voltage VSD VGS=0V,IS=5.8A - - 1.2 V
Diode Forward Current IS - - - 5.8 A
Drain-Source Voltage VDS Tamb=25C unless otherwise specified - - 30 V
Gate-Source Voltage VGS Tamb=25C unless otherwise specified - - 12 V
Drain Current-Continuous ID Tamb=25C unless otherwise specified - - 5.8 A
Drain Current-Pulsed IDM Note 1 - - 30 A
Maximum Power Dissipation PD - - - 1.4 W
Operating Junction and Storage Temperature Range TJ,TSTG - -55 - 150
Thermal Resistance,Junction-to-Ambient RJA Note 2 - 89 - /W

2412021443_PIELENST-AO3400-L_C41376483.pdf

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