P Channel Enhancement Mode MOSFET PJSEMI PJM10H05PPA with RoHS Reach Compliance and Avalanche Tested
Key Attributes
Model Number:
PJM10H05PPA
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
5A
RDS(on):
400mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V
Reverse Transfer Capacitance (Crss@Vds):
31pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.192nF@25V
Pd - Power Dissipation:
1.9W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
PJM10H05PPA
Package:
SOP-8
Product Description
Product Overview
The PJM10H05PPA is a P-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is 100% avalanche tested, RoHS and Reach compliant, and halogen and antimony free. This MOSFET is designed for applications such as load switching, uninterruptible power supplies, and battery protection.
Product Attributes
- Brand: Pingjingsemi
- Certifications: RoHS and Reach Compliant
- Material: Halogen and Antimony Free
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | -ID | 5 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 12 | A | ||
| Maximum Power Dissipation | PD | 1.9 | W | |||
| Single Pulse Avalanche Energy | EAS | Note2 | 20 | mJ | ||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | to | +150 | °C | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250μA | 100 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-100V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note4, VDS=VGS,ID=-250μA | 1.0 | 1.8 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note4, VGS=-10V,ID=-2A | -- | 276 | 350 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note4, VGS=-4.5V,ID=-1A | -- | 291 | 400 | mΩ |
| Forward Transconductance | gFS | Note4, VDS=-5V,ID=-3A | -- | 8 | -- | S |
| Input Capacitance | Ciss | VDS=-25V,VGS=0V,f=1MHz | -- | 1192 | -- | pF |
| Output Capacitance | Coss | VDS=-25V,VGS=0V,f=1MHz | -- | 43 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-25V,VGS=0V,f=1MHz | -- | 31 | -- | pF |
| Gate Resistance | RG | VDS=0V,VGS=0V,f=1MHz | -- | 5.8 | -- | Ω |
| Total Gate Charge | Qg | VDS=-50V,ID=-2A, VGS=-10V | -- | 20 | -- | nC |
| Gate-Source Charge | Qgs | VDS=-50V,ID=-2A, VGS=-10V | -- | 4.7 | -- | nC |
| Gate-Drain Charge | Qg | VDS=-50V,ID=-2A, VGS=-10V | -- | 6.5 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=-50V, ID=-2A, VGS=-10V,RGEN=3Ω | -- | 10 | -- | nS |
| Turn-on Rise Time | tr | VDD=-50V, ID=-2A, VGS=-10V,RGEN=3Ω | -- | 8 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=-50V, ID=-2A, VGS=-10V,RGEN=3Ω | -- | 31 | -- | nS |
| Turn-off Fall Time | tf | VDD=-50V, ID=-2A, VGS=-10V,RGEN=3Ω | -- | 9 | -- | nS |
| Diode Forward Voltage | -VSD | Note4, VGS=0V,IS=-5A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | Note3 | -- | -- | 5 | A |
2405221106_PJSEMI-PJM10H05PPA_C22438607.pdf
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