P Channel Enhancement Mode Power MOSFET PJSEMI PJMG60P60TE Featuring 60 Amp Continuous Drain Current
Key Attributes
Model Number:
PJMG60P60TE
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
22pF
Number:
1 P-Channel
Input Capacitance(Ciss):
2.634nF
Pd - Power Dissipation:
100W
Gate Charge(Qg):
38nC@10V
Mfr. Part #:
PJMG60P60TE
Package:
TO-252
Product Description
PJMG60P60TE P-Channel Enhancement Mode Power MOSFET
The PJMG60P60TE is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Split Gate Trench Technology. It is 100% avalanche tested and RoHS compliant, making it a Halogen and Antimony Free component. This MOSFET is designed for applications such as DC-DC converters, portable equipment, and power management, offering a VDS of -60V and an ID of -60A with low on-resistance.
Product Attributes
- Brand: Pingjingsemi
- Certifications: RoHS Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | -ID | 60 | A | |||
| Drain Current-Pulsed Note1 | -IDM | 220 | A | |||
| Maximum Power Dissipation | PD | 100 | W | |||
| Single Pulse Avalanche Energy Note2 | EAS | 176 | mJ | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | to +150 | °C | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.25 | °C/W | |||
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250μA | 60 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-60V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage Note3 | -VGS(th) | VDS=VGS,ID=-250μA | 1 | 1.8 | 2.5 | V |
| Drain-Source On-Resistance Note3 | RDS(on) | VGS=-10V,ID=-20A | -- | 11 | 16 | mΩ |
| Drain-Source On-Resistance Note3 | RDS(on) | VGS=-4.5V,ID=-10A | -- | 14 | 20 | mΩ |
| Forward Transconductance Note3 | gFS | VDS=-5V,ID=-2A | -- | 9 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-30V,VGS=0V,f=1MHz | -- | 2634 | -- | pF |
| Output Capacitance | Coss | -- | 506 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 22 | -- | pF | |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 11.5 | -- | Ω |
| Total Gate Charge | Qg | VDS=-30V,ID=-10A, VGS=-10V | -- | 38 | -- | nC |
| Gate-Source Charge | Qgs | -- | 6.9 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 4.98 | -- | nC | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-30V,ID=-10A, VGS=-10V,RGEN=3Ω | -- | 20 | -- | nS |
| Turn-on Rise Time | tr | -- | 25 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 60 | -- | nS | |
| Turn-off Fall Time | tf | -- | 30 | -- | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage Note3 | -VSD | VGS=0V,IS=-30A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | -- | -- | 60 | A | |
2407301136_PJSEMI-PJMG60P60TE_C36493742.pdf
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