Power Switching P Enhancement Field Effect Transistor Featuring PJSEMI PJM3401PSA Ultra Low RDS
Key Attributes
Model Number:
PJM3401PSA
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
65mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 P-Channel
Output Capacitance(Coss):
115pF
Input Capacitance(Ciss):
954pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
-
Mfr. Part #:
PJM3401PSA
Package:
SOT-23
Product Description
Product Overview
The PJM3401PSA is a P-Enhancement Field Effect Transistor designed for power switching applications. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and an excellent package for good heat dissipation. This transistor is suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supply systems.
Product Attributes
- Brand: PingJingSemi
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | -ID | 4.1 | A | |||
| Power Dissipation | PD | 1.2 | W | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | ||
| Thermal Characteristics | ||||||
| Maximum Junction-to-Ambient | RΡJA | 104 | °C/W | |||
| Electrical Characteristics (TA=25℃ unless otherwise specified) | ||||||
| Drain-source breakdown voltage | -V(BR)DSS | VGS = 0V, ID=-250µA | 30 | V | ||
| Drain to Source Leakage Current | -IDSS | VDS =-24V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±12V, VDS = 0V | ±100 | nA | ||
| Gate threshold voltage Note1 | -VGS(th) | VDS =VGS, ID =-250µA | 0.7 | 1.3 | V | |
| Drain-source on-resistance Note1 | RDS(on) | VGS =-10V, ID =-4.1A | 65 | mΩ | ||
| Drain-source on-resistance Note1 | RDS(on) | VGS =-4.5V, ID =-2A | 85 | mΩ | ||
| Forward transconductance Note1 | gFS | VDS =-5V, ID =-5A | 7 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = -15V,VGS = 0V,f=1MHz | 954 | pF | ||
| Output Capacitance | Coss | 115 | pF | |||
| Reverse Transfer Capacitance | Crss | 77 | pF | |||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VDD=-15V, VGS=-10VRGEN =6Ω, RL =3.6Ω | 6.3 | ns | ||
| Turn-on rise time | tr | 3.2 | ns | |||
| Turn-off delay time | td(off) | 38.2 | ns | |||
| Turn-off fall time | tf | 12 | ns | |||
| Source-Drain Diode characteristics | ||||||
| Diode Forward voltage | -VSD | VGS =0V, IS=-1A | 1 | V | ||
2410121847_PJSEMI-PJM3401PSA_C411718.pdf
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