Temperature Independent Switching REASUNOS RSS04065G Silicon Carbide Schottky Diode for Power Systems

Key Attributes
Model Number: RSS04065G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
26A
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
650V
Voltage - Forward(Vf@If):
1.8V@4A
Reverse Leakage Current (Ir):
20uA@650V
Current - Rectified:
4.8A
Mfr. Part #:
RSS04065G
Package:
DFN-8(5x6)
Product Description

Product Overview

The RSS04065G is a Silicon Carbide Schottky Diode designed for high-performance applications. It offers a low forward voltage drop, high-speed switching, and a positive temperature coefficient, ensuring temperature-independent switching behavior. This diode is ideal for use in power factor correction, server mode power supplies, and uninterruptible power supplies.

Product Attributes

  • Brand: Reasunos
  • Material: Silicon Carbide
  • Package: DFN5*6

Technical Specifications

Part NumberPackageMarkingPacking Qty.VRRM (V)IF (A) (TC=150)QC (nC)VRRM (V)VRSM (V)VR (V)IF (A)IFSM (A)IF,Max (A)IFRM (A)Ptot (W)tdt (AS)TJ,TST G ()VF (V)IR (A)C (pF)QC (nC)Ec (J)RJC (/W)
RSS04065GDFN5*6RSS04065G5000 PCS6504.89.56506506504.8262002076.5 (TC=25) / 33.2 (TC=110)3.3-55 to1751.5 (Typ., IF=4A, TJ=25) / 1.8 (Max., IF=4A, TJ=25) / 1.8 (Typ., IF=4A, TJ=175) / 2.0 (Max., IF=4A, TJ=175)1 (Typ., VR=650V, TJ=25) / 12 (Max., VR=650V, TJ=25) / 20 (Typ., VR=650V, TJ=175) / 100 (Max., VR=650V, TJ=175)185 (Typ., VR=0V, TJ=25, f=1MHz) / 19.0 (Typ., VR=200V, TJ=25, f=1MHz) / 16.7 (Typ., VR=400V, TJ=25, f=1MHz)9.52.41.95

2509121150_REASUNOS-RSS04065G_C51904717.pdf

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