Power MOSFET Load Switch P Channel Enhancement Mode Featuring PJSEMI PJM3407PSC for PWM Applications
Key Attributes
Model Number:
PJM3407PSC
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
56pF
Number:
1 P-Channel
Output Capacitance(Coss):
70pF
Input Capacitance(Ciss):
530pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
7nC@10V
Mfr. Part #:
PJM3407PSC
Package:
SOT-23-3
Product Description
Product Overview
The PJM3407PSC is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for load switch and PWM applications, offering RoHS and Reach compliance, and is halogen and antimony free.
Product Attributes
- Brand: Pingjing Semiconductor
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | -ID | 4.6 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 20 | A | ||
| Maximum Power Dissipation | PD | 1.25 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 100 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250μA | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-30V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note2,VDS=VGS,ID=-250μA | 1 | 1.6 | 3 | V |
| Drain-Source On-Resistance | RDS(on) | Note2,VGS=-10V,ID=-4.1A | -- | 37 | 55 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note2,VGS=-4.5V,ID=-3A | -- | 53 | 80 | mΩ |
| Forward Transconductance | gFS | Note2,VDS=-5V,ID=-2A | -- | 6.5 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V,VGS=0V,f=1MHz | -- | 530 | -- | pF |
| Output Capacitance | Coss | -- | 70 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 56 | -- | pF | |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 12.8 | -- | Ω |
| Total Gate Charge | Qg | VDS=-15V,ID=-4.1A, VGS=-10V | -- | 7 | -- | nC |
| Gate-Source Charge | Qgs | -- | 1 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 1.4 | -- | nC | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-15V, RL=15Ω, VGS=-10V, RGEN=3Ω | -- | 14 | -- | nS |
| Turn-on Rise Time | tr | -- | 61 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 19 | -- | nS | |
| Turn-off Fall Time | tf | -- | 10 | -- | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | Note3,VGS=0V,IS=-4.6A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | Note2 | -- | -- | 4.6 | A |
2411121111_PJSEMI-PJM3407PSC_C41413537.pdf
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