Field Effect Transistor N Channel Enhancement Mode PJSEMI PJM3400NSA for Load Switching Applications
Key Attributes
Model Number:
PJM3400NSA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
59mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
820pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
9.5nC@10V
Mfr. Part #:
PJM3400NSA
Package:
SOT-23
Product Description
Product Overview
The PJM3400NSA is an N-Channel Enhancement Mode Field Effect Transistor designed for load switching and PWM applications, offering high power and current handling capability. It features a VDS of 30V and a continuous ID of 5.8A, with low RDS(ON) values at various VGS levels.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 30 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.7 | 0.9 | 1.4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=2.5V, ID=4A | - | 45 | 59 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=5A | - | 31 | 45 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=5.8A | - | 28 | 41 | m |
| Forward Transconductance | gFS | VDS=5V,ID=5A | 10 | - | - | S |
| Input Capacitance | Clss | VDS=15V,VGS=0V, f=1.0MHz | - | 820 | - | pF |
| Output Capacitance | Coss | VDS=15V,VGS=0V, f=1.0MHz | - | 99 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V, f=1.0MHz | - | 77 | - | pF |
| Turn-on Delay Time | td(on) | VDD=15V, RL=2.7, VGS=10V,RGEN=3 | - | 3.3 | - | nS |
| Turn-on Rise Time | tr | VDD=15V, RL=2.7, VGS=10V,RGEN=3 | - | 4.8 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=15V, RL=2.7, VGS=10V,RGEN=3 | - | 26 | - | nS |
| Turn-Off Fall Time | tf | VDD=15V, RL=2.7, VGS=10V,RGEN=3 | - | 4 | - | nS |
| Total Gate Charge | Qg | VDS=15V,ID=5.8A, VGS=4.5V | - | 9.5 | - | nC |
| Gate-Source Charge | Qgs | VDS=15V,ID=5.8A, VGS=4.5V | - | 1.5 | - | nC |
| Gate-Drain Charge | Qg d | VDS=15V,ID=5.8A, VGS=4.5V | - | 3 | - | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=5.8A | - | - | 1.2 | V |
| Diode Forward Current | IS | VGS=0V | - | - | 5.8 | A |
| Drain-Source Voltage | VDS | - | - | - | 30 | V |
| Gate-Source Voltage | VGS | - | - | - | 12 | V |
| Drain Current-Continuous | ID | - | - | - | 5.8 | A |
| Drain Current-Pulsed | IDM | Note1 | - | - | 30 | A |
| Maximum Power Dissipation | PD | - | - | - | 1.4 | W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | - | -55 | - | 150 | |
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | - | 89 | - | /W |
2410122006_PJSEMI-PJM3400NSA_C411712.pdf
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