Power MOSFET PJSEMI PJMG40P60TE P Channel Type with 150 Degree Celsius Maximum Junction Temperature
Key Attributes
Model Number:
PJMG40P60TE
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.505nF
Pd - Power Dissipation:
65W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
PJMG40P60TE
Package:
TO-252
Product Description
Product Overview
The PJMG40P60TE is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Split Gate Trench Technology. It is designed for battery switching applications and hard switched, high-frequency circuits, offering robust performance with 100% avalanche testing. This RoHS and Reach compliant, halogen and antimony-free component is rated at -60V VDS and -40A ID, with a low RDS(on) of < 28m @VGS= -10V.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | -ID | 40 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 320 | A | ||
| Maximum Power Dissipation | PD | 65 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance, Junction-to-Case | RJC | 1.9 | °C/W | |||
| Single pulse avalanche energy | EAS | Note2 | 90 | mJ | ||
| Electrical Characteristics (TJ=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250μA | 60 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-60V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note3, VDS=VGS,ID=-250μA | 1.2 | 1.75 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-10V,ID=-15A | -- | 18 | 25 | mΩ |
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V,ID=-10A | -- | 21 | 30 | mΩ |
| Input Capacitance | Ciss | VDS=-25V,VGS=0V,f=1MHz | -- | 1505 | -- | pF |
| Output Capacitance | Coss | VDS=-25V,VGS=0V,f=1MHz | -- | 302 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-25V,VGS=0V,f=1MHz | -- | 17 | -- | pF |
| Total Gate Charge | Qg | VDS=-30V,ID=-3A, VGS=0~-10V | -- | 23 | -- | nC |
| Gate-Source Charge | Qgs | VDS=-30V,ID=-3A, VGS=0~-10V | -- | 4 | -- | nC |
| Gate-Drain Charge | Qg | VDS=-30V,ID=-3A, VGS=0~-10V | -- | 3 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=-30V,ID=-4A, VGS=-10V,RGEN=6Ω | -- | 7 | -- | nS |
| Turn-on Rise Time | tr | VDD=-30V,ID=-4A, VGS=-10V,RGEN=6Ω | -- | 5 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=-30V,ID=-4A, VGS=-10V,RGEN=6Ω | -- | 65 | -- | nS |
| Turn-off Fall Time | tf | VDD=-30V,ID=-4A, VGS=-10V,RGEN=6Ω | -- | 20 | -- | nS |
| Diode Forward Voltage | -VSD | VGS=0V,IS=-6A | -- | -- | 1.2 | V |
| Forward Transconductance | gFS | Note3, VDS=-5V,ID=-1A | -- | 5 | -- | S |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 7 | -- | Ω |
2407301136_PJSEMI-PJMG40P60TE_C36493740.pdf
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