High Density Cell Application N Channel MOSFET PJSEMI PJM7002KNSI with Low On Resistance and ESD Protection
Key Attributes
Model Number:
PJM7002KNSI
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
5Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
40pF
Pd - Power Dissipation:
200mW
Mfr. Part #:
PJM7002KNSI
Package:
SOT-323
Product Description
Product Overview
The PJM7002KNSI is an N-Channel Enhancement Mode Power MOSFET designed for high-density cell applications. It offers low RDS(on), voltage-controlled small signal switching, and high saturation current capability. This ESD protected device (HBM up to 2.5KV) is suitable for DC/DC converters and load switches in portable devices.
Product Attributes
- Brand: PingJingSemi
- Model: PJM7002KNSI
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Package: SOT-323
- ESD Protection: HBM up to 2.5KV
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 60 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 10 | A |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1 | 1.4 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=0.5A | -- | 1.3 | 5 | |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=0.2A | -- | 1.4 | 5.3 | |
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHz | -- | -- | -- | pF |
| Output Capacitance | Coss | -- | -- | -- | -- | pF |
| Reverse Transfer Capacitance | Crss | -- | -- | -- | -- | pF |
| Turn-on Delay Time | td(on) | VGS=10 V, VDD=50V, RG=50 RGS=50,RL=250 | -- | -- | 10 | nS |
| Turn-off Delay Time | td(off) | -- | -- | -- | 15 | nS |
| Reverse Recovery Time | trr | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/S | -- | 30 | -- | nS |
| Recovered Charge | Qr | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/S | -- | 30 | -- | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=0.3A | -- | -- | 1.5 | V |
| Diode Forward Current | IS | -- | -- | -- | 0.2 | A |
| Drain-Source Voltage | VDS | -- | -- | -- | 60 | V |
| Gate-Source Voltage | VGS | -- | -- | 20 | -- | V |
| Drain Current-Continuous | ID | -- | -- | -- | 0.34 | A |
| Drain Current-Pulsed | IDM | Note1 | -- | -- | 0.8 | A |
| Maximum Power Dissipation | PD | -- | -- | -- | 0.2 | W |
| Junction Temperature | TJ | -- | -- | -- | 150 | C |
| Storage Temperature Range | TSTG | -- | -55 | -- | +150 | C |
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | -- | 625 | -- | C/W |
2204281630_PJSEMI-PJM7002KNSI_C3000400.pdf
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