P channel MOSFET transistor RENESAS NP36P06SLG E1 AY with low on state resistance and gate protection diode
Key Attributes
Model Number:
NP36P06SLG-E1-AY
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
36A
Operating Temperature -:
-
RDS(on):
30mΩ@10V,18A
Gate Threshold Voltage (Vgs(th)):
2V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
205pF
Number:
1 P-Channel
Output Capacitance(Coss):
350pF
Pd - Power Dissipation:
1.2W;56W
Input Capacitance(Ciss):
3.2nF@10V
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
NP36P06SLG-E1-AY
Package:
TO-252
Product Description
Product Overview
This P-channel MOS Field Effect Transistor (NP36P06SLG) is designed for high current switching applications. It features super low on-state resistance and low input capacitance, with a built-in gate protection diode. This product is designed for automotive applications and is AEC-Q101 qualified.
Product Attributes
- Brand: Renesas Electronics
- Certifications: AEC-Q101 qualified
- Material: Pb-free (external electrode)
- Application: Automotive
Technical Specifications
| Item | Symbol | Min | Typ | Max | Unit | Test Conditions |
| Drain to Source Voltage (VGS = 0 V) | VDSS | -60 | V | |||
| Gate to Source Voltage (VDS = 0 V) | VGSS | 20 | V | |||
| Drain Current (DC) (Tc = 25 C) | ID(DC) | 36 | A | |||
| Drain Current (pulse) | ID(pulse) | 108 | A | Notes1 | ||
| Total Power Dissipation (Tc = 25 C) | PT1 | 56 | W | |||
| Total Power Dissipation (Ta = 25 C) | PT2 | 1.2 | W | |||
| Channel Temperature | Tch | 175 | C | |||
| Storage Temperature | Tstg | -55 | 175 | C | ||
| Single Avalanche Current | IAS | 23.4 | A | Notes2 | ||
| Single Avalanche Energy | EAS | 54.8 | mJ | Notes2 | ||
| Channel to Case Thermal Resistance | Rth(ch-c) | 2.68 | C/W | Notes3 | ||
| Channel to Ambient Thermal Resistance | Rth(ch-a) | 125 | C/W | Notes3 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | A | VDS = -60 V, VGS = 0 V | ||
| Gate Leakage Current | IGSS | 10 | A | VGS = 20 V, VDS = 0 V | ||
| Gate to Source Cut-off Voltage | VGS(off) | -1.0 | -2.0 | -2.5 | V | VDS = -10 V, ID = -1mA |
| Forward Transfer Admittance | |yfs| | 12 | S | VDS = -10 V, ID = -18 A (Notes4) | ||
| Drain to Source On-state Resistance | RDS(on)1 | 24 | 30 | m | VGS = -10 V, ID = -18 A (Notes4) | |
| Drain to Source On-state Resistance | RDS(on)2 | 27 | 40 | m | VGS = -4.5 V, ID = -18 A (Notes4) | |
| Input Capacitance | Ciss | 3200 | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | ||
| Output Capacitance | Coss | 350 | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | ||
| Reverse Transfer Capacitance | Crss | 205 | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | ||
| Turn-on Delay Time | td(on) | 7 | ns | VDD = -30 V, ID = -18 A, VGS = -10 V, RG = 0 | ||
| Rise Time | tr | 12 | ns | VDD = -30 V, ID = -18 A, VGS = -10 V, RG = 0 | ||
| Turn-off Delay Time | td(off) | 190 | ns | VDD = -30 V, ID = -18 A, VGS = -10 V, RG = 0 | ||
| Fall Time | tf | 110 | ns | VDD = -30 V, ID = -18 A, VGS = -10 V, RG = 0 | ||
| Total Gate Charge | Qg | 52 | nC | VDD = -48 V, VGS = -10 V, ID = -36 A | ||
| Gate to Source Charge | Qgs | 6.9 | nC | VDD = -48 V, VGS = -10 V, ID = -36 A | ||
| Gate to Drain Charge | Qgd | 15 | nC | VDD = -48 V, VGS = -10 V, ID = -36 A | ||
| Body Diode Forward Voltage | VF(S-D) | 1.2 | V | IF = -36 A, VGS = 0 V (Notes4) | ||
| Reverse Recovery Time | trr | 46 | ns | IF = -36 A, VGS = 0 V, di/dt = -100 A/s | ||
| Reverse Recovery Charge | Qrr | 75 | nC | IF = -36 A, VGS = 0 V, di/dt = -100 A/s |
2312101623_RENESAS-NP36P06SLG-E1-AY_C6344901.pdf
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