N channel transistor PJSEMI PJM123NSA designed for small servo motor controls and switching circuits
Key Attributes
Model Number:
PJM123NSA
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
170mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
10Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 N-channel
Output Capacitance(Coss):
15pF
Input Capacitance(Ciss):
60pF
Pd - Power Dissipation:
900mW
Gate Charge(Qg):
2nC@10V
Mfr. Part #:
PJM123NSA
Package:
SOT-23
Product Description
PJM123NSA N- Enhancement Mode Field Effect Transistor
The PJM123NSA is an N-channel enhancement mode field-effect transistor designed for switching applications and small servo motor controls. It features a surface mount package, low RDS(ON), and ESD protection up to 2KV (HBM).
Product Attributes
- Brand: PingJing
- Package: SOT-23
- Marking: B123
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | TC=25, unless otherwise noted | 100 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 0.17 | A | |||
| Pulsed Drain Current | IDM | tp=10s | 0.68 | A | ||
| Power Dissipation | PD | 0.9 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics (TA=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 100 | - | - | V |
| Gate Leakage Current | IGSS | VDS = 0V, VGS = 20V | - | 10 | A | |
| Zero Gate Voltage Drain Current | IDSS | VDS =100V, VGS = 0V | - | 1 | A | |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1 | - | 3 | V |
| Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID =0.17A | 3.5 | 6 | ||
| Drain-Source On-Resistance | RDS(ON) | VGS = 4.5V, ID =0.17A | 3.8 | 10 | ||
| Forward transconductance | gfs | VDS = 10V, ID = 0.17A | 80 | - | - | mS |
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS = 25V, VGS = 0V, f = 1MHz | 29 | 60 | pF | |
| Output Capacitance | Coss | 10 | 15 | pF | ||
| Reverse Transfer Capacitance | Crss | 2 | 6 | pF | ||
| Switching Parameters | ||||||
| Turn-On Delay Time | td(on) | VDD=30V, VGS=10V RGEN=50, ID=0.28A | - | 8 | ns | |
| Turn-On Rise Time | tr | - | 8 | ns | ||
| Turn-Off Delay Time | td(off) | - | 13 | ns | ||
| Turn-Off Fall Time | tf | - | 16 | ns | ||
| Total Gate Charge | Qg | VDS=10V,VGS=10V,ID=0.22A | 1.4 | 2 | nC | |
| Gate-Source Charge | Qgs | 0.15 | 0.25 | nC | ||
| Gate-Drain Charge | Qgd | 0.2 | 0.4 | nC | ||
| Drain-source Diode Parameters | ||||||
| Source-Drain Diode Current | IS | - | 0.17 | A | ||
| Forward Diode Voltage | VSD | VGS = 0V, IS = 0.34A | - | 1.3 | V | |
2202131930_PJSEMI-PJM123NSA_C2838028.pdf
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