Power MOSFET PJSEMI PJM03P40SA P Channel Type Featuring 40V Voltage Rating and RoHS Reach Compliance
Key Attributes
Model Number:
PJM03P40SA
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
3A
RDS(on):
138mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
24.5pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
240pF@20V
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
8.5nC@10V
Mfr. Part #:
PJM03P40SA
Package:
SOT-23
Product Description
Product Overview
The PJM03P40SA is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is RoHS and Reach Compliant, and Halogen and Antimony Free. This MOSFET is ideal for load switch, PWM applications, and power management. Key specifications include VDS of -40V, ID of -3A, and low RDS(on) of < 138m @VGS= -10V and < 175m @VGS= -4.5V.
Product Attributes
- Brand: PingJingSemi
- Package Type: SOT-23
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | -ID | 3 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 12 | A | ||
| Maximum Power Dissipation | PD | 0.7 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | 179 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250A | 40 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-40V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note3, VDS=VGS,ID=-250A | 1.2 | 1.8 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-10V,ID=-3A | -- | 106 | 138 | m |
| Note3, VGS=-4.5V,ID=-2A | -- | 148 | 175 | m | ||
| Forward Transconductance | gFS | Note3, VDS=-5V,ID=-1A | -- | 3.1 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-20V,VGS=0V,f=1MHz | -- | 240 | -- | pF |
| Output Capacitance | Coss | -- | 34 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 24.5 | -- | pF | |
| Gate Resistance | RG | VDS=0V,VGS=0V,f=1MHz | -- | 18.5 | -- | |
| Total Gate Charge | Qg | VDS=-20V,ID=-3A, VGS=-10V | -- | 8.5 | -- | nC |
| Gate-Source Charge | Qgs | -- | 1 | -- | nC | |
| Gate-Drain Charge | Qg d | -- | 2 | -- | nC | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-20V, ID=-3A, VGS=-10V,RGEN=3 | -- | 6 | -- | nS |
| Turn-on Rise Time | tr | -- | 6 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 31 | -- | nS | |
| Turn-off Fall Time | tf | -- | 19 | -- | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | Note3, VGS=0V,IS=-3A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | Note2 | -- | -- | 3 | A |
2412311540_PJSEMI-PJM03P40SA_C42431758.pdf
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