Power Switching MOSFET PJSEMI PJM10H06NSQ featuring Low Gate Charge and RDSon below 140 milliohm at VGS 10V
Key Attributes
Model Number:
PJM10H06NSQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
9A
RDS(on):
140mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
90pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
1.35W
Input Capacitance(Ciss):
690pF@25V
Gate Charge(Qg):
15.5nC@10V
Mfr. Part #:
PJM10H06NSQ
Package:
SOT-89
Product Description
Product Overview
The PJM10H06NSQ is an N-Channel Enhancement Mode Power MOSFET featuring excellent RDS(on) and low gate charge. It is designed for power switching applications, including Uninterruptible Power Supplies. With a VDS of 100V and ID of 6A, it offers RDS(on) < 140m @VGS=10V.
Product Attributes
- Brand: PingJingSemi
- Package: SOT-89
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 6 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 24 | A | ||
| Maximum Power Dissipation | PD | 1.35 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | to | +150 | °C | |
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 92.5 | °C/W | ||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 100 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250μA | 1 | 1.8 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=10V,ID=5A | -- | 110 | 140 | mΩ |
| Forward Transconductance | gFS | Note3,VDS=5V,ID=2.9A | -- | 8 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | -- | 690 | -- | pF |
| Output Capacitance | Coss | -- | 120 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 90 | -- | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, RL=15Ω, ID=2A,VGS=10V,RGEN=2.5Ω | -- | 11 | -- | nS |
| Turn-on Rise Time | tr | -- | 7.4 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 35 | -- | nS | |
| Turn-off Fall Time | tf | -- | 9.1 | -- | nS | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=30V,ID=3A, VGS=10V | -- | 15.5 | -- | nC |
| Gate-Source Charge | Qgs | -- | 3.2 | -- | nC | |
| Gate-Drain Charge | Qg | -- | 4.7 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=6A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 6 | A |
2411191726_PJSEMI-PJM10H06NSQ_C42388532.pdf
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