N Channel Enhancement Mode Power MOSFET PJSEMI PJM03N10SQ designed for fast switching and dissipation
Key Attributes
Model Number:
PJM03N10SQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-
RDS(on):
178mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
90pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
1.35W
Input Capacitance(Ciss):
690pF@25V
Gate Charge(Qg):
15.5nC@10V
Mfr. Part #:
PJM03N10SQ
Package:
SOT-89
Product Description
Product Overview
The PJM03N10SQ is an N-Channel Enhancement Mode Power MOSFET designed for efficient power switching. It features fast switching speeds, low reverse transfer capacitance, and low gate charge, making it suitable for load switching and PWM applications. With a VDS of 100V and ID of 3A, it offers low RDS(on) for improved performance.
Product Attributes
- Brand: PJM
- Origin: Pingjing Semiconductor (implied by URL)
- Type: N-Channel Enhancement Mode Power MOSFET
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 3 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 20 | A | ||
| Maximum Power Dissipation | PD | 1.35 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | to | +150 | °C | |
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 93 | °C/W | ||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 100 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250μA | 1 | -- | 2 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=10V,ID=3A | -- | -- | 178 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V,ID=3A | -- | -- | 190 | mΩ |
| Forward Transconductance | gFS | Note3,VDS=5V,ID=2.9A | 3 | -- | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | -- | 690 | -- | pF |
| Output Capacitance | Coss | -- | 120 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 90 | -- | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, RL=15Ω, VGS=10V,RGEN=2.5Ω | -- | 11 | -- | nS |
| Turn-on Rise Time | tr | -- | 7.4 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 35 | -- | nS | |
| Turn-off Fall Time | tf | -- | 9.1 | -- | nS | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=15V,ID=4A, VGS=10V | -- | 15.5 | -- | nC |
| Gate-Source Charge | Qgs | -- | 3.2 | -- | nC | |
| Gate-Drain Charge | Qg | -- | 4.7 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=3A | -- | -- | 1.5 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 3 | A |
2411191726_PJSEMI-PJM03N10SQ_C42388544.pdf
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