Power MOSFET PJSEMI PJM20H02NSC N Channel 200V VDS and 1.5A Continuous Drain Current for Buck Converters
Key Attributes
Model Number:
PJM20H02NSC
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
1.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
700mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.6pF
Number:
1 N-channel
Input Capacitance(Ciss):
900pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
PJM20H02NSC
Package:
SOT-23-3
Product Description
Product Overview
The PJM20H02NSC is an N-Channel Enhancement Mode Power MOSFET designed for synchronous buck converter applications. It features advanced trench technology, offering robust performance with a VDS of 200V and ID of 1.5A. This RoHS and Reach compliant component is halogen and antimony free, with a Moisture Sensitivity Level of 3.
Product Attributes
- Brand: PingJingSemi
- Model: PJM20H02NSC
- Certifications: RoHS, Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
- Marking Code: 0202C
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 200 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 1.5 | A | |||
| Maximum Power Dissipation | PD | 1.25 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance,Junction-to-Ambient | RΘJA | Note1 | 100 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 200 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=200V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | Note2, VDS=VGS,ID=250μA | 1.2 | -- | 3.0 | V |
| Drain-Source On-Resistance | RDS(on) | Note2, VGS=10V,ID=1.5A | -- | -- | 700 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note2, VGS=4.5V,ID=1A | -- | -- | 900 | mΩ |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | -- | 900 | -- | pF |
| Output Capacitance | Coss | -- | 130 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 4.6 | -- | pF | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=160V,ID=1.5A, VGS=10V | -- | 15 | -- | nC |
| Gate-Source Charge | Qgs | -- | 3 | -- | nC | |
| Gate-Drain Charge | Qg | -- | 5.2 | -- | nC | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=100V,ID=1.5A, VGS=10V,RGEN=3Ω | -- | 25 | -- | nS |
| Turn-on Rise Time | tr | -- | 36 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 48 | -- | nS | |
| Turn-off Fall Time | tf | -- | 14 | -- | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note2, VGS=0V,IS=1.5A | -- | -- | 1.0 | V |
| Diode Forward Current | IS | -- | -- | 1.5 | A | |
Notes:
1. Surface Mounted on FR4 Board, t ≤ 10 sec.
2. Pulse Test: Pulse width≤300μs, duty cycle≤2%.
2411121111_PJSEMI-PJM20H02NSC_C41413534.pdf
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