20V MOSFET PANJIT PJT7600 R1 00001 Featuring Trench Process Technology and ESD Protection for Electronic
Key Attributes
Model Number:
PJT7600_R1_00001
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
325mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.1pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
27pF
Input Capacitance(Ciss):
151pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
2.2nC@4.5V
Mfr. Part #:
PJT7600_R1_00001
Package:
SOT-363
Product Description
Product Overview
The PPJT7600 is a 20V complementary enhancement mode MOSFET featuring ESD protection. It is specifically designed for switch load and PWM applications, utilizing an advanced Trench Process Technology. This device is lead-free, compliant with EU RoHS 2011/65/EU, and manufactured with a green molding compound as per IEC61249 Std. (Halogen Free). The SOT-363 package is suitable for various electronic designs.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
- Package Type: SOT-363
- Marking: T60
Technical Specifications
| Parameter | Symbol | N-Ch Limit | P-Ch Limit | Units | Test Condition | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | -20 | V | ||||
| Gate-Source Voltage | VGS | +8 | +8 | V | ||||
| Continuous Drain Current | ID | 1 | -0.7 | A | ||||
| Pulsed Drain Current (Note 4) | IDM | 4 | -2.8 | A | ||||
| Power Dissipation (Ta=25oC) | PD | 350 | mW | |||||
| Derate above 25oC | 2.8 | mW/ oC | ||||||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55~150 | oC | |||||
| Typical Thermal resistance - Junction to Ambient (Note 3) | RJA | 357 | oC/W | |||||
| Static Drain-Source Breakdown Voltage | BVDSS | 20 | -20 | V | VGS=0V, ID= 250uA / -250uA | |||
| Gate Threshold Voltage | VGS(th) | 0.5 | -0.5 | V | VDS=VGS, ID= 250uA / -250uA | 0.8 / -0.64 | 1.0 / -1 | |
| Drain-Source On-State Resistance | RDS(on) | 114 | 260 | m | VGS= 4.5V, ID= 1A / VGS= -4.5V, ID= -0.7A | 150 / 325 | ||
| Drain-Source On-State Resistance | RDS(on) | 160 | 310 | m | VGS= 2.5V, ID= 0.7A / VGS= -2.5V, ID= -0.6A | 215 / 420 | ||
| Drain-Source On-State Resistance | RDS(on) | 280 | 400 | m | VGS= 1.8V, ID= 0.3A / VGS= -1.8V, ID= -0.5A | 400 / 600 | ||
| Zero Gate Voltage Drain Current | IDSS | 0.01 | -0.01 | uA | VDS= 20V, VGS=0V / VDS=-20V, VGS=0V | 1 / -1 | ||
| Gate-Source Leakage Current | IGSS | +2 | +3.5 | uA | VGS=+8V, VDS=0V | +10 | ||
| Total Gate Charge | Qg | 1.6 | 2.2 | nC | VDS=10V, ID=1A, VGS=4.5V / VDS=-10V, ID=-0.7A, VGS=-4.5V (Note 1,2) | |||
| Gate-Source Charge | Qgs | 0.3 | 0.4 | |||||
| Gate-Drain Charge | Qgd | 0.41 | 0.5 | |||||
| Input Capacitance | Ciss | 92 | 151 | pF | VDS=10V, VGS=0V, f=1.0MHZ / VDS=-10V, VGS=0V, f=1.0MHZ | |||
| Output Capacitance | Coss | 25 | 27 | |||||
| Reverse Transfer Capacitance | Crss | 9.1 | 8.8 | |||||
| Switching Turn-On Delay Time | td(on) | 5.8 | 2.2 | ns | VDD=10V, ID=1A, VGS=4.5V, RG=6 / VDD=-10V, ID=-0.7A, VGS=-4.5V, RG=6 (Note 1,2) | |||
| Turn-On Rise Time | tr | 25.7 | 19.2 | |||||
| Turn-Off Delay Time | td(off) | 41 | 6.2 | |||||
| Turn-Off Fall Time | tf | 31 | 23 | |||||
| Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current | IS | 1 | -1 | A | ||||
| Diode Forward Voltage | VSD | 0.85 | -0.86 | V | IS= 1A, VGS=0V / IS=-1A, VGS=0V | 1.2 / -1.2 |
2410121321_PANJIT-PJT7600-R1-00001_C391662.pdf
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