MOSFET PJSEMI PJM60N60TE with 60 volts drain source breakdown voltage and 60 amps continuous current
Key Attributes
Model Number:
PJM60N60TE
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
14mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
173pF
Number:
1 N-channel
Output Capacitance(Coss):
201pF
Input Capacitance(Ciss):
3.018nF
Pd - Power Dissipation:
70W
Gate Charge(Qg):
77nC@10V
Mfr. Part #:
PJM60N60TE
Package:
TO-252
Product Description
Product Overview
The PJM60N60TE is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It offers 100% avalanche testing, RoHS compliance, and is halogen and antimony-free. This MOSFET is designed for load switching, PWM applications, and power management, providing a VDS of 60V and a continuous ID of 60A with low on-resistance.
Product Attributes
- Brand: PJM
- Certifications: RoHS Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 60 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1 | 1.5 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=30A | -- | 7 | 10 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=20A | -- | 8.5 | 14 | m |
| Forward Transconductance | gFS | VDS=5V,ID=2A | -- | 9.5 | -- | S |
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | -- | 3018 | -- | pF |
| Output Capacitance | Coss | VDS=25V,VGS=0V,f=1MHz | -- | 201 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V,f=1MHz | -- | 173 | -- | pF |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 1.7 | -- | |
| Total Gate Charge | Qg | VDS=30V, ID=30A, VGS=10V | -- | 77 | -- | nC |
| Gate-Source Charge | Qgs | VDS=30V, ID=30A, VGS=10V | -- | 14 | -- | nC |
| Gate-Drain Charge | Qgd | VDS=30V, ID=30A, VGS=10V | -- | 15 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=30V, ID=30A, VGS=10V, RGEN=1.8 | -- | 13 | -- | nS |
| Turn-on Rise Time | tr | VDD=30V, ID=30A, VGS=10V, RGEN=1.8 | -- | 77 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=30V, ID=30A, VGS=10V, RGEN=1.8 | -- | 50 | -- | nS |
| Turn-off Fall Time | tf | VDD=30V, ID=30A, VGS=10V, RGEN=1.8 | -- | 106 | -- | nS |
| Diode Forward Voltage | VSD | VGS=0V,IS=30A | -- | -- | 1.2 | V |
| Drain-Source Voltage | VDS | -- | -- | -- | 60 | V |
| Gate-Source Voltage | VGS | -- | -- | 20 | -- | V |
| Drain Current-Continuous | ID | -- | -- | -- | 60 | A |
| Drain Current-Pulsed | IDM | Note1 | -- | -- | 232 | A |
| Maximum Power Dissipation | PD | -- | -- | -- | 70 | W |
| Single pulse avalanche energy | EAS | Note2 | -- | 56 | -- | mJ |
| Junction Temperature | TJ | -- | -- | -- | 150 | C |
| Storage Temperature Range | TSTG | -- | -55 | -- | +150 | C |
| Thermal Resistance, Junction-to-Case | RJC | -- | -- | 1.79 | -- | C/W |
2407301136_PJSEMI-PJM60N60TE_C36493754.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
