Power MOSFET PJSEMI PJM04P20SG P Channel Enhancement Mode with Excellent Electrical Characteristics
Key Attributes
Model Number:
PJM04P20SG
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-
RDS(on):
39mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
94pF
Number:
1 P-Channel
Output Capacitance(Coss):
108pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
762pF
Gate Charge(Qg):
13.1nC
Mfr. Part #:
PJM04P20SG
Package:
SOT-23-6
Product Description
Product Overview
The PJM04P20SG is a P-Channel Enhancement Mode Power MOSFET featuring advanced Trench Technology. It is designed for applications such as load switching, PWM, and power management. This RoHS and Reach compliant, halogen and antimony-free component offers excellent performance with low on-resistance and high current capabilities.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current-Continuous | -ID | 4.1 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 16 | A | ||
| Maximum Power Dissipation | PD | 1.2 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | to | +150 | °C | |
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 104 | °C/W | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250μA | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-20V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±12V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note3, VDS=VGS,ID=-250μA | 0.4 | 0.65 | 1 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-4.5V,ID=-4.1A | -- | 28 | 39 | mΩ |
| Note3, VGS=-2.5V,ID=-3A | -- | 35 | 50 | mΩ | ||
| Forward Transconductance | gFS | Note3, VDS=-5V,ID=-2A | -- | 10.5 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-10V,VGS=0V,f=1MHz | -- | 762 | -- | pF |
| Output Capacitance | Coss | -- | 108 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 94 | -- | pF | |
| Gate Resistance | RG | VDS=0V,VGS=0V,f=1MHz | -- | 12 | -- | Ω |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=-10V, ID=-4.1A, VGS=4.5V | -- | 13.1 | -- | nC |
| Gate-Source Charge | Qgs | -- | 2 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 2.7 | -- | nC | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-10V,RL=1.2Ω, VGS=-4.5V, RGEN=1Ω | -- | 12 | -- | nS |
| Turn-on Rise Time | tr | -- | 35 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 30 | -- | nS | |
| Turn-off Fall Time | tf | -- | 10 | -- | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | VGS=0V,IS=-4.1A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | -- | -- | 4.1 | A | |
2411121111_PJSEMI-PJM04P20SG_C41413539.pdf
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