Low RDS ON Dual N Channel Power MOSFET PJSEMI PJM03DN20DFA with 20 Volt Maximum Drain Source Voltage
Key Attributes
Model Number:
PJM03DN20DFA
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
2 N-Channel
Output Capacitance(Coss):
120pF
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
300pF
Gate Charge(Qg):
4nC@4.5V
Mfr. Part #:
PJM03DN20DFA
Package:
DFN2x2A-6L
Product Description
Product Overview
The PJM03DN20DFA is a Dual N-Channel Enhancement Mode Power MOSFET designed for efficient switching applications. It features low On-Resistance (RDS(ON)) and comes in a small surface mount package, making it suitable for compact electronic designs. With a VDS of 20V and ID of 3.6A, it offers a maximum RDS(on) of 45m at VGS=10V. This MOSFET is ideal for use in DC/DC converters and other switching circuits.
Product Attributes
- Brand: PJM (implied by product code)
- Origin: www.pingjingsemi.com
- Certifications: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current-Continuous | ID | 3.6 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 16 | A | ||
| Maximum Power Dissipation | PD | 1 | W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | 125 | /W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250µA | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | -- | -- | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±12V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3, VDS=VGS,ID=250µA | 0.5 | 0.75 | 1.2 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=10V,ID=3.6A | -- | 45 | -- | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=4.5V,ID=3A | -- | 45 | -- | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=2.5V,ID=2.8A | -- | 60 | -- | mΩ |
| Forward Transconductance | gFS | Note3, VDS=5V,ID=3A | -- | 8 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHz | -- | 300 | -- | pF |
| Output Capacitance | Coss | VDS=10V,VGS=0V,f=1MHz | -- | 120 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=10V,VGS=0V,f=1MHz | -- | 80 | -- | pF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=10V, ID=3A, VGS=4.5V,RGEN=6Ω | -- | 10 | -- | nS |
| Turn-on Rise Time | tr | VDD=10V, ID=3A, VGS=4.5V,RGEN=6Ω | -- | 50 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=10V, ID=3A, VGS=4.5V,RGEN=6Ω | -- | 17 | -- | nS |
| Turn-off Fall Time | tf | VDD=10V, ID=3A, VGS=4.5V,RGEN=6Ω | -- | 10 | -- | nS |
| Total Gate Charge | Qg | VDS=10V,ID=3A, VGS=4.5V | -- | 4 | -- | nC |
| Gate-Source Charge | Qgs | VDS=10V,ID=3A, VGS=4.5V | -- | 0.7 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=10V,ID=3A, VGS=4.5V | -- | 1.5 | -- | nC |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3, VGS=0V,IS=3.3A | -- | 0.75 | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 3.6 | A |
2407190958_PJSEMI-PJM03DN20DFA_C30187476.pdf
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