Power MOSFET PJSEMI PJM08N30DF N Channel with Low RDS on and 30V Drain Source Breakdown Voltage
Key Attributes
Model Number:
PJM08N30DF
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
29mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
27.5pF
Number:
1 N-channel
Input Capacitance(Ciss):
625pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
PJM08N30DF
Package:
DFN2x2-6L
Product Description
Product Overview
The PJM08N30DF is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is RoHS and Reach compliant, halogen and antimony free, and has a Moisture Sensitivity Level 1. This MOSFET is designed for load switching, PWM applications, and power management, offering a VDS of 30V, ID of 8A, and low RDS(on) at various gate-source voltages.
Product Attributes
- Brand: PingJing Semiconductor
- Certifications: RoHS, Reach Compliant
- Material: Halogen and Antimony Free
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1 | 1.6 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=5A | -- | 10 | 20 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=3A | -- | 16 | 29 | m |
| Forward Transconductance | gFS | VDS=5V,ID=2A | -- | 5.5 | -- | S |
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | -- | 625 | -- | pF |
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHz | -- | 125 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHz | -- | 27.5 | -- | pF |
| Total Gate Charge | Qg | VDS=15V, ID=5.8A, VGS=10V | -- | 10 | -- | nC |
| Gate-Source Charge | Qgs | VDS=15V, ID=5.8A, VGS=10V | -- | 1.7 | -- | nC |
| Gate-Drain Charge | Qg | VDS=15V, ID=5.8A, VGS=10V | -- | 2 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=15V, ID=3A, VGS=10V, RGEN=3 | -- | 6 | -- | nS |
| Turn-on Rise Time | tr | VDD=15V, ID=3A, VGS=10V, RGEN=3 | -- | 16 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=15V, ID=3A, VGS=10V, RGEN=3 | -- | 15 | -- | nS |
| Turn-off Fall Time | tf | VDD=15V, ID=3A, VGS=10V, RGEN=3 | -- | 6 | -- | nS |
| Diode Forward Voltage | VSD | VGS=0V,IS=8A | -- | -- | 1.2 | V |
| Drain-Source Voltage | VDS | -- | -- | 30 | V | |
| Gate-Source Voltage | VGS | -- | -- | 20 | V | |
| Drain Current-Continuous | ID | -- | -- | 8 | A | |
| Drain Current-Pulsed | IDM | Note1 | -- | -- | 32 | A |
| Maximum Power Dissipation | PD | -- | -- | 2 | W | |
| Single Pulsed Avalanche Energy | EAS | Note2 | -- | -- | 25 | mJ |
| Junction Temperature | TJ | -- | -- | 150 | C | |
| Storage Temperature Range | TSTG | -55 | -- | +150 | C | |
| Thermal Resistance,Junction-to-Ambient | RJA | Note3 | -- | 62.5 | -- | C/W |
2406251631_PJSEMI-PJM08N30DF_C22470324.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
