Dual N-Channel Enhancement Mode MOSFET PJSEMI PJM07DN30PA for Load Switching and Power Management
Key Attributes
Model Number:
PJM07DN30PA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7A
RDS(on):
45mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
52pF
Number:
2 N-Channel
Output Capacitance(Coss):
66pF
Input Capacitance(Ciss):
702pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
9.5nC@4.5V
Mfr. Part #:
PJM07DN30PA
Package:
SOP-8
Product Description
Product Overview
The PJM07DN30PA is a Dual N-Channel Enhancement Mode Power MOSFET designed for load switching, PWM applications, and power management. It features advanced trench technology, 100% avalanche tested, and is RoHS and Reach compliant, as well as Halogen and Antimony Free. This MOSFET offers low on-resistance and is suitable for various power electronic applications.
Product Attributes
- Brand: PingJingSemi
- Marking Code: 07DN30
- Package: SOP-8
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Product Summary | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Continuous Drain Current | ID | 7 | A | |||
| On-Resistance (@VGS=10V) | RDS(on) | VGS=10V, ID=5.8A | 41 | m | ||
| On-Resistance (@VGS=4.5V) | RDS(on) | VGS=4.5V, ID=5A | 45 | m | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 7 | A | |||
| Pulsed Drain Current | IDM | Note1 | 30 | A | ||
| Maximum Power Dissipation | PD | Note2 | 2 | W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Electrical Characteristics (TJ=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | Note3, VDS=VGS,ID=250A | 0.7 | 0.9 | 1.4 | V |
| Drain-Source On-Resistance | RDS(on) | Note2, VGS=10V, ID=5.8A | 41 | m | ||
| Drain-Source On-Resistance | RDS(on) | Note2, VGS=4.5V, ID=5A | 45 | m | ||
| Forward Transconductance | gFS | Note3, VDS=5V,ID=5A | 10 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | 702 | pF | ||
| Output Capacitance | Coss | 66 | pF | |||
| Reverse Transfer Capacitance | Crss | 52 | pF | |||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=15V,RL=2.7, VGS=10V,RGEN=3 | 3.3 | nS | ||
| Turn-on Rise Time | tr | 4.8 | nS | |||
| Turn-off Delay Time | td(off) | 26 | nS | |||
| Turn-off Fall Time | tf | 4 | nS | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3, VGS=0V,IS=7A | 1.2 | V | ||
| Diode Forward Current | IS | Note2 | 7 | A | ||
2405221106_PJSEMI-PJM07DN30PA_C22438602.pdf
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