PJM2319PSA P Enhancement Field Effect Transistor Engineered for Low On Resistance and Power Management
Key Attributes
Model Number:
PJM2319PSA
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
4.4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
61pF
Number:
1 P-Channel
Output Capacitance(Coss):
76pF
Input Capacitance(Ciss):
595pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
PJM2319PSA
Package:
SOT-23
Product Description
PJM2319PSA P-Enhancement Field Effect Transistor
The PJM2319PSA is a P-Enhancement Mode Field Effect Transistor designed for fast switching and ultra-low Qgd. It features a low RDS(on) of 80 m @VGS= -10V, making it suitable for applications such as Load Switches and DC/DC Converters.
Product Attributes
- Brand: PingJingSemi
- Product Code: PJM2319PSA
- Type: P-Enhancement Field Effect Transistor
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | -ID | TC = 25 | 4.4 | A | ||
| Continuous Drain Current | -ID | TA = 25 | 3.1 | A | ||
| Pulsed Drain Current | -IDM | Note 1 | 20 | A | ||
| Total Power Dissipation | PD | 1.25 | W | |||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | SOT-23 | 100 | /W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | -BVDSS | VGS = 0 V, ID = -250uA | 40 | - | - | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS =-40 V, VGS = 0V | - | - | 1 | uA |
| Gate-to-Source Leakage Current | IGSS | VDS = 0 V, VGS = 20V | - | - | 100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note2, VGS = VDS, ID = -250uA | 1 | - | 3 | V |
| Drain-to-Source On-Resistance | RDS(on) | Note2, VGS = -10V, ID = -3.1A | - | 66 | 80 | m |
| Drain-to-Source On-Resistance | RDS(on) | Note2, VGS = -4.5V, ID = -2.6A | - | 90 | 120 | m |
| Forward Transconductance | gFS | Note2, VDS = -15 V, ID = -3.1A | - | 10 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS = 0 V, f = 1.0 MHz, VDS = -20 V | - | 595 | - | pF |
| Output Capacitance | Coss | - | 76 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 61 | - | pF | |
| Total Gate Charge | Qg | VDS =-20V, VGS =-4.5V, ID = -3.1A | - | 7 | 11 | nC |
| Gate-Source Charge | Qgs | - | 2.5 | - | ||
| Gate-Drain Charge | Qg | n- | 3.2 | - | ||
| Turn-On Delay Time | td(on) | VDS =-20V, ID=-2.5A, VGEN =-10V, RL =8, | - | 8 | 16 | ns |
| Turn-On Rise Time | tr | - | 9 | 18 | ||
| Turn-Off Delay Time | td(off) | - | 20 | 30 | ||
| Turn-Off Fall Time | tf | - | 8 | 16 | ||
| Source-Drain Diode Characteristics | ||||||
| Body Diode Voltage | -VSD | IS=-2.5A, VGS=0V | 0.8 | 1.5 | V | |
| Continuous Source-Drain Diode Current | -IS | 1 | A | |||
2410121742_PJSEMI-PJM2319PSA_C411720.pdf
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